In view of the advantages of low temperature process and high efficiency possibility, the microcrystalline silicon (mc-Si)/crystalline silicon (c-Si) heterojunction (HJ) solar cells have been studied. In this work, mc-Si/c-Si heterojunction solar cells were prepared using hot-wire chemical vapor deposition (HWCVD). Details of the HWCVD parameters effects on the structure, electrical and optical properties of the undoped and doped Si films were systematically studied. Finally, a solar cell structure consisting of Ag grid/ITO/n-nc-Si/textured p-c-Si/Al was obtained and conversion efficiency of 16.4% have been achieved. These are very encouraging results for future fabrication of high efficiency Si HJ solar cells.