利用界面粗化技術提升氮化鎵藍綠光發光二極體光取出效率

Light Extraction Efficiency of GaN-based LEDs Enhanced by Interfacial Roughening Techniques

許進恭(J. K. Sheu) ； 李明倫(M. L. Lee) ； 楊智喬(C.C. Yang) ； 杜尚儒(S. J. Tu)

《光學工程》 103期 (2008/10) Pp. 30-47

https://doi.org/10.30011/OE.200810.0004

摘要

發光二極體(LED)光源具有節省能源、環保與堅固耐用等優點，因LED具有取代傳統照明的潛力，但達成此一目標所面臨的最大挑戰在於價格以及效率。目前利用MOVPE成長高品質的磊晶片，其內部量子效率已經可達80 %以上，但是在外部量子效率方面大約只有40 %上下。造成LED外部量子效率偏低的原因有很多，其中最主要的原因是光取出效率太低所致。因此，如何提升LED之光取出效率實為提升LED效率最重要的課題，尤其對於研發高亮度LED將有重大影響。本文將針對此課題作一概略探討。

關鍵字

發光二極體 ； 外部量子效率 ； 光取出效率

並列摘要

The LED light source which is energy conserved, environment protected and durable, has a lot of advantages so that is a potential substitute of conventional illumination. However, prices and efficiencies are great challenge before LEDs become prevalent. At present the internal quantum efficiency of high quality LEDs grown by MOVPE has been as high as 80%, but the external quantum efficiency (EQE) is only around 40%. There are a lot of reasons causing low EQE such as the low light-extraction efficiency. Therefore, the enhancement of LED light extraction efficiencies becomes the most important issue in the development of LED lightings.

並列關鍵字

LED ； external quantum efficiency ； light extraction efficiency