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利用變溫電激發量測探討氮化鎵發光二極體的內部量子效率與效率下降

Investigation of Internal Quantum Efficiency and Efficiency Droop in GaN-based Light Emitting Diodes by Temperature-dependent Electroluminescence Measurement

摘要


三五族氮化物的發光二極體有多樣化的應用,但作爲固態照明取代傳統光源,提高內部量子效率以及改善高注入時的效率下降問題是非常重要的。本文針對圖型化藍寶石基板發光二極體以及不同量子井厚度的發光二極體進行變溫電激發的量測,探討缺陷密度對於效率曲線的影響,以及不同量子井厚度對效率下降的影響機制。

並列摘要


Ⅲ-Nitride based light-emitting diodes (LEDs) have various applications. But for replacing traditional lighting, improvement of internal quantum efficiency and efficiency droop at high injection is very important. In this letter, we use temperature-dependent electroluminescence measurement to investigate patterned sapphire substrate LEDs and LEDs with different well widths. We focus on the influence of dislocation density on the curvature of efficiency and droop behavior with various well widths.

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