操控奈米矽錐／柱結構形貌探討表面去極化、反射光譜與微拉曼散射之特性研究

Manipulative Surface Depolarization, Reflectance Spectra, and micro-Raman Scattering of Morphologically Controlled Si nano-rod/Pillar

白益豪(Yi-Hao Pai) ； 林泳詳(Yung-Hsiang Lin) ； 孟繁舜(Fan-Shuen Meng) ； 林恭如(Gong-Ru Lin)

《光學工程》 111期 (2010/07) Pp. 47-53

https://doi.org/10.30011/OE.201007.0006

摘要

本研究探討可操控表面形貌相關抗反射、微拉曼散射特性與次微米級矽奈柱／錐去極化效應。研究指出矽奈米錐在400-450奈米波段擁有最低反射率值約1.5%，主要是由於多層浙變折射率結構引起破壞性干射造成的結果，TM模態入射光會與較多束縛電子作用而經歷較少變化之有效介電常數；反之TE模態入射光會引起較明顯表面去極化效應。此外，提升矽奈米柱之作用面積會增加四面體矽晶格振動模態藉此提高拉曼散射弦度，研究也發現隨著增加矽奈米柱長度，拉曼訊號峰值紅移4波數以及線寬增大9波數。

關鍵字

矽奈米柱／錐 ； 去極化 ； 微拉曼散射 ； 反射率

並列摘要

Depolarization of submicrometer Si nano-rod/pillar surface reflectance with manipulative anti-reflection and micro-Raman scattering is demonstrated. Smallest reflectance dip of 1.5% at 400-450 nm for Si nano-pillars is attributed to the graded-index multilayer induced destructive surface interference. The TM-mode incidence interacts with more bound electrons to experience less deviated effective dielectric permittivity, whereas the TE-mode incidence causes a larger surface depolarization ratio. Except the enhanced surface Raman scattering under the enlarged interaction area with tetrahedrally coordinated Si vibrations, the Raman peaks shifted by -4 cm^(-1) associated with broadening linewidth up to 9 cm^(-1) is observed with increasing Si nano-rod length.

並列關鍵字

Si nano-rod/pillar ； Depolarization ； Micro-Raman scattering ； Reflectance