近紅外光成像之有機上轉換元件

本次研究中我們首度提出新型近紅外光成像之有機上轉換元件與概念，其原理係利用共蒸鍍的方式製備出有機載子產生層偵測外部環境之弱光，同時提供光驅動電流誘使後方顯示元件進行影像重塑機制，而元件結構為陽極／載子產生層／電洞傳輸層／發光層／電子傳輸層／陰極，並經由電子電洞在發光層復合產生出光源影像。由上述之設計概念，我們可以展示出元件具有10000倍的電流增益值、在7 V的操作電壓下可得最大發光亮度為1500 cd/m^2、以及3V的低驅動電壓值（以超過100 cd/m^2為基準）特性。此外，當我們將元件結構搭配透明陰極製程並在暗室內施加近紅外光的照射條件下，其元件可即時提供出外部三維實體影像（具有420 dpi解析度）於顯示屏內。

關鍵字

有機上轉換元件；近紅外光偵測；有機發光二極體；有機光伏打電池；光偵測器

並列摘要

In this study, the authors present a novel organic upconversion device (OUD) for near-infrared (NIR) image sensing. The mixed donor/acceptor used as a charge generation layer (CGL) to absorb the weak ambient light. The proposed OUD was device configurations of anode/CGL/hole transporting layer/emitting layer/electron transporting layer/cathode to provide a green emission. As a result, the optimal OUD exhibited a current gain as high as 10 000 (defined as current on-to-off ratio), maximum luminance of 1500 cd/m^2 at driving voltage of 7 V, and low turn-on voltage of 3 V (defined as the luminance of 100 cd/m^2). In addition, our OUD with transparent electrode was proposed to form a clear three-dimensional image of a real object with a high resolution of 420 dots per inch under NIR illuminance.

並列關鍵字

Organic upconversion devices ； near-infrared sensing ； organic light-emitting diodes ； organic photovoltaic devices ； photodetectors

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