在本論文中，提出一種新型的介面熔絲元件(interface Fuse，iFuse)，此介面熔絲元件具有低功率、低電流編程及低壓操作，且可適用於各種先進邏輯製程而不需要額外光罩及製程等特點，此元件由金屬到接點(Contact)間之介面或接點到多晶矽間之介面所組成，其可以擁有比其他一般電子熔絲還要低的編程電流。而本論文中針對介面熔絲提出了兩種具有可行性的佈局架構，平行式介面熔絲與對角式介面熔絲，平行式架構可有效解決製程光罩對準偏差的問題，而對角式架構及採用光學鄰近效應修正則可更進一步降低元件之編程電流。

In this paper, we proposed a novel interface Fuse (iFuse) for low power electrically programmable fuses in advanced CMOS applications. With an offset-landed metal to contact or contact to poly-silicon structures, the iFuse can be programmed by substantially reduced current as compared to conventional fuses. A diagonal contact layout and the optical pattern correction scheme can further improve the cell stability as well as its programming characteristics.

第一章 導論 1
1.1 前言 1
1.2 論文綱要 2
第二章 相關技術回顧與發展 3
2.1 電子熔絲元件編程機制 3
2.2.1 電遷移效應(Electron migration) 3
2.2.2 電流叢聚效應(current crowding effect) 4
2.2.3 焦耳熱效應(Joule heating effect) 5
2.2 多晶矽熔絲(Poly Fuse) 5
2.3 金屬熔絲(Metal Fuse) 6
2.4 雷射熔絲(Laser Fuse) 6
2.5 反熔絲元件(anti-Fuse) 7
2.6 比較與討論 8
第三章 介面熔絲記憶元件(iFuse) 15
3.1 元件的結構與設計概念 15
3.2 元件的操作與邏輯狀態 16
3.2.1 元件的編程 16
3.2.2 元件的讀取與邏輯狀態 17
3.3 元件編程電流的量測 17
第四章 平行式介面熔絲記憶元件 (Parallel iFuse) 23
4.1 元件結構與佈局 23
4.2 金屬-接點 平行式介面熔絲電性量測與討論 24
4.2.1 介面面積與燒錄電流的關係 25
4.2.2 初始電阻值與編程電流 25
4.2.3 編程電流方向的影響 26
4.2.4 溫度效應 26
4.3 接點-多晶矽 平行式介面熔絲 27
4.4 元件耐久度測試 28
4.5 小結 28
第五章 對角式介面熔絲記憶元件 (Diagonal iFuse) 42
5.1 元件結構與佈局 42
5.2 金屬-接點 對角式介面熔絲電性量測與討論 43
5.2.1 介面面積與編程電流 43
5.2.2 光學鄰近效應修正之影響 43
5.2.3 初始電阻值與燒錄電流 44
5.3 介面熔絲的比較與討論 44
第六章 結論 53
6.1 結語 53
6.2 未來的展望 54
參考資料 56

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