本論文應用矽奈米線場效電晶體製造出兼備高選擇性和高靈敏度之奈米感測元件。矽奈米線具有很高的表面積/體積比，故能靈敏地感測出其表面電位的改變。藉由此特性，我們將一具有氨基之化學分子(AEAPTMS)固定於矽奈米線上，並利用此一分子在不同酸鹼度的溶液中所帶的淨電荷不同，而影響矽奈米線的電性改變。由此我們可以了解溶液之酸鹼度對矽奈米線之導電度的關係。同理，將具有特殊專一性之生物分子固定於此一檢測平臺上，從而了解生物分子對此元件上的電性影響為何。此外，為了使此電子感測元件能有效的在溶液中檢測，並減少分析物的需求量，我們將微流道整合到此量測平臺。而我們也分別製造開放式和封閉式的微流道，使我們的元件有更廣泛的應用。
研究發現使用AEAPTMS表面修飾後的矽奈米線，其導電度對酸鹼度呈現一線性的關係。而其靈敏度約為95 nS/pH。另外，在使用抗體感測器檢測時，也可發現其對二級抗體(anti-rabbit IgG)的有效感測濃度約為10-12g/ml。從上述之結果說明矽奈米線場效電晶體具有很高的靈敏度可供我們來應用。

This study demonstrated that the pH-sensors and biosensors based on boron-doped silicon nanowire field effect transistors (SiNW-FETs) are highly sensitive and selective for detections. N-(2-aminoethyl)-3-aminopropyltri-methoxysilane (AEAPTMS) functionalized SiNWs were adopted to detect the change of surface states in different pH level solutions. Furthermore, the change in conductance will be monitored, when the binding event of anti-rabbit IgG and steroid occurs on the rabbit IgG and ketosteroid isomerase modified surface, respectively. In order to reduce the consumption of the sample volume, we delivered the molecule and buffer solutions through the SiNW by means of the microfluidic channel. Two types of microfluidic channel (SU8, PDMS) were adopted through this study.
The study also found that the conductance of amino-functionalized SiNW-FET nanosensors was linearly changed with the change of pH value. The sensitivity of SiNW-FET pH-sensor is about 95 nS/pH for the pH values from 5 to 9. Detection of the anti-rabbit IgG in a concentration of 10-12 g/ml was also achieved. Also, steroid detection was demonstrated on the silicon microwire sensors.

Contents--------------------------------------------------------------------------------------------i
Contents of Figures------------------------------------------------------------------------------ii
Abstract in Chinese-----------------------------------------------------------------------------iii
Abstract-------------------------------------------------------------------------------------------iv
Abbreviation--------------------------------------------------------------------------------------v
Chapter 1. Introduction--------------------------------------------------------------------------1
1.1 Motivation------------------------------------------------------------------------------5
1.2 Overview of thesis---------------------------------------------------------------------6
Chapter 2. Fabrication of nanosensors platform---------------------------------------------9
2.1 Fabrication of SiNW-FETs-----------------------------------------------------------9
2.1.1 Comparison SiNW with CNT for applications in sensor---------------9
2.1.2 Comparison top-down techniques with bottom-up techniques for
Nano-devices---------------------------------------------------------------10
2.1.3 Materials--------------------------------------------------------------------11
2.1.4 Scaning probe lithography (SPL)----------------------------------------11
2.1.5 Electron-beam lithography (EBL)---------------------------------------13
2.2 Fabrication of microfluidic channels----------------------------------------------14
2.2.1 Materials--------------------------------------------------------------------16
2.2.2 SU-8 photoresist-based open channels----------------------------------16
2.2.3 PDMS polymer-based closed channels---------------------------------16
Chapter 3. Application of SiNW-FETs based sensors-------------------------------------20
3.1 AEAPTMS-modified SiNW-FETs as pH sensors-------------------------------20
3.1.1 Modification of SiNWs with AEAPTMS-------------------------------20
3.1.2 Detection and measurement of different pH buffer solutions--------21
3.1.3 Results and Discussion----------------------------------------------------21
3.2 Rabbit IgG immobilized SiNW-FETs as antibody sensors---------------------29
3.2.1 Surface modification-------------------------------------------------------30
3.2.2 Detection and measurement of the surface modification and the
sensing of anti-rabbit IgG-------------------------------------------------31
3.2.3 Results and Discussion----------------------------------------------------31
3.3 KSI-immobilized SiNW-FETs as steroid sensors-------------------------------34
3.3.1 Surface modification-------------------------------------------------------34
3.3.2 Detection and measurement of different pH buffer solutions--------35
3.3.3 Results and Discussion----------------------------------------------------35
Chapter 4. Conclusion-------------------------------------------------------------------------41
References---------------------------------------------------------------------------------------42

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