整合高分子的有機發光二極體和有機場效電晶體在同一個基板，以製作主動式矩陣(active-matrix array)電路，可以採用溶液塗佈成膜，大量節省製程成本，而且基板的選擇性大，可以整合在可撓式基板上，同時有機發光二極體具有高亮度、高對比、低操作電壓等優點，被認為是應用潛力深厚的新興顯示器。本論文主要研究如何使用兩個有機高分子薄膜電晶體和一個電容製作成2T1C主動式矩陣電路在玻璃基板上，並在電路完成後塗佈上有機發光二極體，進而製作成有機平面顯示器。

　　我們使用高分子材料P3HT當作有機場效電晶體的半導體層，使用二氧化矽當作絕緣層，成功地在玻璃基板上製作出載子遷移率(mobility)在10-2(cm2/V-s)，開關電流比(on/off ratio)在104的場效電晶體。我們使用鉻(Cr)當閘極材料以穩定P3HT場效電晶體的良率，改良光罩設計以降低漏電流，用不同塗佈方式和氧電漿(O2 plasma)處理來提高載子遷移率，最後將P3HT場效電晶體運用在主動式1T1C電路上，並成功地操作其充電及放電行為在頻率10Hz、100Hz、500Hz和1KHz，在頻率1KHz時可以得到開啟時間最快可到0.3(ms)。

Integrating polymer light-emitting diodes (LED) and polymer field-effect transistors (FET) on one substrate to fabricate 2T1C active-matrix array circuit by solution process can reduce the cost substantially. The polymer devices can be fabricated on various substrates, such as flexible substrate. Additionally, organic LEDs are regarded as the potential technology in display with advantages of high brightness, high contrast, and low operating voltage.

We use P3HT as semiconductor, use SiO2 as insulator, and successfully fabricate FET with mobility of 10-2 (cm2/V-s) and on/off ratio of 104 on glass substrate. To increase reliability of P3HT FET, we use chromium as gate material. To lower leakage current, we design new mask. We also use different coating methods and O2 plasma treatment to enhance mobility. Eventually, we applied P3HT FETs to 1T1C active-matrix circuit and obtained successful operation of charging and discharge in this 1T1C circuit at 10Hz, 100Hz, 500Hz, and 1KHz. The fastest rise time is 0.3 (ms).

第一章　序論 1
1.1、研究背景---------------------------------------------1
1.2、研究動機與方向---------------------------------------1
1.3、論文架構---------------------------------------------2
第二章　實驗原理 3
2.1、有機高分子主動式矩陣顯示器的介紹與操作原理-----------3
2.2、有機薄膜場效電晶體的結構、操作方式和重要參數的計算---6
2.3、P3HT材料特性與介紹----------------------------------10
2.4、P3HT場效電晶體的特性--------------------------------11
第三章　實驗架構 15
3.1、元件結構--------------------------------------------15
3.2、元件製作流程----------------------------------------17
　3.2.1、閘極圖形製作(第一層)----------------------------17
　3.2.2、介電層沉積和蝕刻(第二層)------------------------19
　3.2.3、源極、汲極和電容的製作(第三層)------------------21
　3.2.4、P3HT的塗佈--------------------------------------23
　3.2.5 樣品回收的問題-----------------------------------24
3.3、元件量測--------------------------------------------25
第四章　實驗項目與結果分析 26
4.1、閘級材料的選取--------------------------------------26
　4.1.1、使用ITO當作閘極材料的問題-----------------------26
　4.1.2、不同金屬閘極材料的比較--------------------------29
4.2、漏電流的討論閘級材料的選取--------------------------36
4.3、P3HT與絕緣層介面的討論------------------------------43
　4.3.1、HMDS的成膜比較----------------------------------44
　4.3.2、使用O2 plasma處理介電層表面---------------------53
4.4、2T1C電路的量測--------------------------------------65
　4.4.1、HSPICE軟體模擬電路------------------------------66
　4.4.2、使用商用場效電晶體作測試------------------------72
　4.4.3、使用P3HT場效電晶體作測試------------------------75
第五章　總結 92
參考文獻-------------------------------------------------93

[1] M. M. Ling and Z. Bao “Thin Film Deposition, Patterning, and Printing in Organic Thin Film Transistors” Chem. Mater. 16, 4284 (2004)
[2] G.M. Wang, J. Swensen, D. Moses, A.J. Heeger, J. Appl. Phys. 93 (2003) 6137.
[3] E. J. Meijer, C. Detcheverry, P. J. Baesjou, E. van Veenendaal, and D. M. de Leeuw, T. M. Klapwijk, J. Appl. Phys, 93 (2003) 4831
[4] H. Sirringhaus, N. Tessler, R. H. Friend ”Integrated Optoelectronic Devices Based on Conjugated Polymers” Science 280, 1741 (1998)
[5] Z. Bao, A. Dodabalapur, A. J. Lovinger “Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility” Appl. Phys. Lett. 69, 4108 (1996)
[6] H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E.W. Meijer, P. Herwig, D. M. de Leeuw “Two-dimensional charge transport in self-organized, high-mobility conjugated polymers” Nature 401, 685 (1999)
[7] H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer “Microstructure-mobility correlation in self-organised, conjugated polymer field-effect transistors ” Synth. Met. 111–112, 129 (2000)
[8] B. Grevin, P. Rannou, R. Payerne, A. Pron, J. P. Travers ”Multi-scale scanning tunning microscopy imaging of self-organized regioregular poly(3-hexylthiophene) films” J. Chem. Phys. 118, 7097 (2003)
[9] B. Grevin, P. Rannou, R. Payerne, A. Pron, J. P. Travers ”Scanning Tunning Microscopy Investigations of Self-Organized Poly(3-hexylthiophene) Two-Dimensional Polycrystals” Adv. Mater. 15, 881 (2003)
[10] “Two-dimensional charge transport in self-organized high-mobility conjugated polymers” Nature VOL401 ,OCTOBER 14 (1999)
[11] H. Sirringhaus, N. Tessler, R. H. Friend ”Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodes” Synth. Met. 102, 857 (1999)
[12] Y. Xu, D. Wu, Y. H. Sun, Z. H. Li, B. Z. Dong, Z. H. Wu “Comparative study on hydrophobic anti-reflective films from three kinds methyl-modified silica sols” J. Non-Cryst. Solids 351, 258(2005)
[13] E. J. Meijer, C. Detcheverry, P. J. Baesjou, E. van Veenendaal, D. M. de Leeuw, T. M. Klapwijk “Dopant density determination in disordered organic field-effect transistors” J. Appl. Phys. 93, 4831 (2003)
[14] S. K. Park, Y. H. Kim, J. I. Han, D. G. Moon, W. K. Kim “High-Performance Polymer TFTs Printed on a Plastic Substrate” IEEE Trans. Electron. Devices ED-49, 2008 (2003)
[15] S. K. Park, Y. H. Kim, J. I. Han, D. G. Moon, W. K. Kim, M. G. Kwak “Electrical characteristics of poly(3-hexylthioohene) thin film transistors printed and spin-coated on a plastic substrates” Synth. Met. 139, 377 (2003)