本實驗以純銦及純錫粉末作為來源粉末，並使用高溫水平爐管為加熱源，通入Ar (90%) + H2 (10%)為載氣，成功藉由熱蒸鍍法在鍍金之矽基板上成長得到均勻且高密度的氧化銦錫奈米線。實驗結果顯示，高溫段為600°C的三段持溫製程為目前的最佳製程條件，且在接近來源粉末的高溫區，能得到較低溫區更高密度且均勻的奈米線。藉由GIAXRD與TEM的繞射點及高解析影像分析，可確認600°C及650°C製程所得之氧化銦錫奈米線為單晶的氧化銦結構。本實驗的奈米線析出機制為VLS機制，奈米線體為摻雜少量錫之氧化銦，奈米線末端有催化顆粒，其成分由金、銦、錫、氧所組成。本實驗製程所得之氧化銦錫奈米線的電阻率約在103 μΩ等級，符合導體的電性標準。在光譜分析部分，氧化銦錫奈米線對可見光的穿透率約為50 ∼ 60%，並在375 nm及585 nm波長位置有兩個吸收峰值，分別是由氧化銦錫本身的能隙及表面的氧空缺所造成。

目錄
一、前言 1
二、文獻回顧 2
2-1 一維（1-D）奈米結構之定義與發展 2
2-2 奈米線的合成方法 3
2-3 奈米線的成長機制 10
2-4 氧化銦錫奈米線 16
2-4-1 氧化銦錫奈米線的製備 16
2-4-2 氧化銦錫結構 16
2-4-3 氧化銦錫電學性質 17
2-4-4 氧化銦錫光學性質 18
2-4-5 氧化銦錫的應用 19
三、實驗方法 22
3-1 實驗流程 22
3-1-1 銦錫混合粉末配置 22
3-1-2 濺鍍薄膜的製備 23
3-1-3 奈米線的合成 23
3-2奈米線結構分析、成分分析與性質量測 28
3-2-1 場發射掃描式電子顯微鏡 28
3-2-2 穿透式電子顯微鏡 29
3-2-3 能量散射光譜儀 29
3-2-4 低掠角X-ray繞射儀 30
3-2-5 聚焦離子束與電子束顯微系統 30
3-2-6 半導體參數量測儀 31
3-2-7 陰極射線激發螢光光譜 31
3-2-8 紫外光-可見光光譜儀 32
四、結果與討論 33
4-1 製程溫度對成長奈米線的影響 33
4-2 沈積位置對成長奈米線的影響 39
4-3 奈米線微結構分析與成分分析 43
4-4 奈米線成長機制的探討 52
4-4-1 金膜對成長奈米線的影響 52
4-4-2 三段持溫過程對成長奈米線的影響 53
4-4-3 氧化銦錫奈米線析出機制探討 54
4-5 奈米線的電性量測 64
4-6 奈米線的CL光譜分析 73
4-7 奈米線的透光性質量測 76
五、結論 80
六、未來研究方向 82
七、參考文獻 83

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