本研究合成一種具有羧酸基團 (carboxylic group) 的蒽 (anthracene) 衍生物 (anthracenetetracarboxylic acid，ATC) ，利用蒽衍生物材料主體的半導體性質，配合接上之羧酸基團的親水性，可使其在溶液環境中，選擇性成長在親水性表面改質後的二氧化矽 (SiO2) 閘極介電層上，且位於源極與汲極金屬之間，直接形成薄膜有機電晶體 (organic thin film transistor, OTFT) 。
　　為了達到未來應用於軟性電子低成本 (大面積塗佈印刷製作) 、低溫 (< 200 □C) 之製程需求，及整合於未來積體電路產業之應用，本研究目標包括：第一，使有機半導體材料溶於毒性較低之溶劑中，大量使用此半導體材料與溶劑進行溶液製程時，不致破壞環境；第二，利用溶液製程，在一般大氣環境下使有機半導體薄膜選擇性成長在所需之位置，進一步節省成本。結果顯示，本研究成功的合成出含羧酸基團之蒽衍生物ATC，並利用其獨特之親水性，可於低毒性之親水性溶液環境中，選擇性成長有機半導體薄膜在親水性表面改質後的閘極介電層上，直接形成有機電晶體元件。此有機電晶體元件，可於一般大氣環境中量測其場效電晶體特性，其電子遷移率約為10-2 cm2V-1s-1，起始電壓約為-1.5 V，且開關電流比 (Ion/Ioff) 約為102，足以驗證此半導體材料ATC具備應用於未來軟性電子之可能性。

In this study, a novel anthracene derivative, anthracenetetracarboxylic acid (ATC) , was synthesized for organic thin film transistors (OTFTs) . This anthracene derivative, with the semiconductor properties of its core, was functionalized with carboxylic groups on 2, 3:6, 7 positions. With these hydrophilic carboxylic acid groups, ATC could be selective grown onto the gate dielectric layer (SiO2) modified with hydrophilic self-assembled monolayer (SAM), located between the source and drain metal, to form OTFTs via solution process directly.
In order to meet the requirements of low-cost (large-area printing production), low process temperature (<200 □C) for future flexible electronics applications and the feasibility to be integrated with integrated circuits, this research is mainly focused on the following two major goals. Firstly, to avoid of the damages of the ecological environment, it is important to improve the solubility of organic semiconductors in environmentally friendly solvents. Secondly, via solution processes, selective growth of organic semiconductor film directly on the selected location is developed to reduce the process cost. Results showed that anthracene derivative ATC could be successfully synthesized. With its unique hydrophilic property and the use of environmentally friendly hydrophilic solvent, selective growth of ATC organic semiconductor film on gate dielectric modified with hydrophilic SAM was achieved to form OTFTs directly. Transistor characteristics of such OTFTs were measured in air, with a mobility of about 10-2 cm2V-1s-1, a threshold voltage of -1.5 V and an on/off current ratio about 102. Results above have demonstrated the feasibility of using solution-processed, hydrophilic organic semiconductor ATC for OTFTs fabrication and future flexible electronics application.

摘要 I
Abstract II
誌謝 IV
目錄 VII
圖示目錄 X
表目錄 XIV
第一章 緒論 1
1-1 前言 1
1-2 有機薄膜電晶體 (OTFTs) 2
1-3 OTFT結構與工作原理 4
1-4 OTFT元件效能參數及其擷取 7
1-4-1 載子遷移率 (Mobility, μ) 7
1-4-2 起始電壓 (Threshold Voltage, VT) 8
1-4-3 開關電流比 (on/off current ratio, Ion/Ioff) 9
1-5有機半導體 (OSC) 傳導機制 10
第二章 文獻回顧 12
2-1 有機薄膜電晶體 (OTFTs) 之發展 12
2-2 選擇性成長OTFT之主動層 15
第三章 研究流程與方法 17
3-1 蒽衍生物 (ATC) 之合成 18
3-2 基板製備 26
3-3 基板上表面預處理及其特性分析 26
3-4 薄膜製備及選擇性有機薄膜電晶體元件之製作 28
3-5 分析儀器 30
3-5-1 核磁共振儀 (Nuclear Magnetic Resonance, NMR) 30
3-5-2 傅立葉變換紅外光譜儀 (Fourier Transform Infrared Spectroscopy, FTIR ) 32
3-5-3 高解析質譜儀 (High-resolution Mass Spectrometer, HR-Mass) 33
3-5-4 循環伏安法 (Cyclic Voltammetry, CV) 34
3-5-5 紫外光/可見光光譜儀 (UV-Vis Spectrophotometer)與螢光光譜儀 (Photoluminescence Spectrophotometer) 35
3-5-6 原子力顯微鏡 (Atomic Force Microscope, AFM) 37
3-5-7 接觸角量測儀 (Contact Angle Meter) 38
3-5-8 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 39
3-5-9 螢光光學顯微鏡 (Fluorescence Microscope) 40
3-5-10 X光繞射分析儀 (X-Ray Diffractometer) 41
3-5-11 電性量測儀 (Semiconductor Parameter Analyzer) 42
第四章 研究結果與討論 43
4-1 ATC材料合成及鑑定 43
4-2 光學性質與能帶分析 48
4-3 ATC材料鑑定與能帶分析之討論 52
4-4 底接觸電極表面疏水處理 53
4-5 閘極介電層表面親水處理之參數最佳化 54
4-6 基板表面預處理之討論 57
4-7 薄膜製程參數最佳化 58
4-8 選擇性成長ATC於親水性改質後之閘極介電層表面 61
4-9 選擇性成長ATC薄膜與製程參數最佳化之討論 63
4-10 結晶結構分析 64
4-11 OTFT元件特性探討 68
4-12 OTFT元件特性與結晶結構、表面形貌之討論 73
第五章 結論 74
第六章 未來展望 76
參考文獻 77
本研究產出之論文發表 81

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