本實驗以射頻磁控濺鍍法於玻璃基板上鍍製Zn3N2以及共摻雜之ZnO:(Ga、N)薄膜，研究濺鍍參數以及退火處理對其結構和性質之影響。
在實驗的第一部份，調整不同濺鍍參數，嘗試於玻璃基板上製備Zn3N2，後續則改變不同退火條件，了解熱處理對Zn3N2氧化行為的影響。研究結果顯示，製備Zn3N2較適當之濺鍍功率為25W，且所鍍製出之Zn3N2有強烈的(400)優選方向。Zn3N2薄膜在經過後續的退火處理後，約在450℃會開始氧化，且氧化溫度是影響氧化行為的最主要參數，若溫度提高，氧化速率會加快。此外，薄膜厚度及退火時間也會影響氧化後ZnO之性質。
第二部份則利用共摻雜方式製備ZnO:(Ga、N)，實驗中採用固定功率，改變不同N2/Ar比例以及基板溫度，探討其對於薄膜結構和光學及電學性質的影響。研究結果顯示，提高基板溫度有助於電阻率的降低，而工作氣體中N2比例的提高，電阻率會有上升的趨勢。此外，退火處理對ZnO:(Ga、N)薄膜的電阻率也會有顯著影響，在500℃退火後，電阻率明顯上升，推測這是由於退火處理使得ZnO薄膜的本質缺陷降低所致。研究結果也發現，於氧氣氛中退火較有利於本實驗鍍製之ZnO:(Ga、N)薄膜產生p-type電性。

目錄 I
表目錄 III
圖目錄 IV
第一章 緒論 1
1-1前言 1
1-2研究動機 2
第二章 文獻回顧 4
2-1氧化鋅基本性質與應用 4
2-2 undoped與n-type ZnO 5
2-3 p-type ZnO 6
2-4共摻雜理論 9
2-5氮化鋅文獻回顧 12
2-6利用Zn3N2氧化製備p-type ZnO 13
第三章 實驗方法 19
3-1薄膜製備 19
3-1-1基板準備 19
3-1-2靶材製作 19
3-1-3薄膜鍍製 20
3-1-4薄膜退火處理 21
3-2薄膜性質分析與量測 21
3-2-1 X光繞射儀(XRD) 21
3-2-2掃描式電子顯微鏡(SEM) 21
3-2-3霍爾效應量測系統(Hall effect measurement system) 22
3-2-4電流-電壓(I-V)量測 22
3-2-5光學性質量測 22
第四章 結果與討論 26
4-1Zn3N2製備與氧化行為研究 26
4-1-1 Zn3N2製備 26
4-1-1-1純Ar氣氛下，改變濺鍍功率 26
(1)SEM分析 26
(2)晶體結構分析 27
4-1-1-2純N2氣氛下，改變濺鍍功率 27
(1)SEM分析 27
(2)晶體結構分析 28
4-1-1-3固定功率下，改變Ar/N2比例 29
(1)表面形貌與晶體結構分析 29
4-1-2 Zn3N2之氧化 31
4-1-2-1膜厚、退火溫度及退火時間的影響 31
(1)初鍍膜分析 31
(2)退火後晶體結構分析 32
(3)退火後SEM分析 33
(4)退火後電性分析 34
4-1-2-2相同膜厚下，比較退火溫度、退火時間以及退火氣氛的影響 34
(1)固定退火時間，改變退火溫度 35
(2)固定退火溫度，改變退火時間 35
(3)固定退火溫度，改變退火氣氛 36
4-1-2-3綜合討論 37
4-2射頻磁控濺鍍ZnO: (Ga、N)薄膜 38
4-2-1改變N2/(Ar＋N2)比例 38
(1)晶體結構與表面形貌分析 38
(2)光學性質分析 39
(3)電性分析 39
4-2-2改變基板溫度 40
(1)晶體結構與表面形貌分析 40
(2)光學性質分析 41
(3)電性分析 41
4-2-3固定基板溫度，改變N2/(Ar＋N2)比例 42
(1)晶體結構與表面形貌分析 42
(2)光學性質分析 43
(3)電性分析 43
4-2-4退火後電性比較 45
4-2-5電流-電壓( I-V)量測 46
第五章 結論 77
參考文獻 79

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