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作者(中文):張國恩
作者(外文):Chang, Kuo-En
論文名稱(中文):氧化亞鐵硫桿菌代謝溶液中雷射輔助金屬銅沉積之製程分析
論文名稱(外文):Process Analysis of Laser-Assisted Copper Deposition through Thiobacillus Ferrooxidans Metabolite
指導教授(中文):賀陳弘
指導教授(外文):Hocheng, Hong
學位類別:碩士
校院名稱:國立清華大學
系所名稱:動力機械工程學系
學號:9733584
出版年(民國):99
畢業學年度:98
語文別:英文
論文頁數:70
中文關鍵詞:微結構金屬沉積無光罩製程氧化亞鐵硫桿菌代謝溶液點熱源
外文關鍵詞:micro structuresmetal depositionmaskless fabricationT. ferrooxidansmetabolitemoving thermal
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現今微結構製作大多經由光微影技術製造而成,需經由定義光罩、曝光、顯影、蝕刻等步驟。運用自由成型技術將可省下製程時間及定義光罩,例如透過雷射照射在基材表面,由光熱效應觸發聚集的金屬水溶液發生局部金屬還原沉積。在先前的研究中,透過雷射輔助化學液相沉積結合氧化亞鐵硫桿菌代謝溶液做為工作溶液,先經由代謝溶液蝕刻金屬銅,以形成帶有飽和的銅離子水溶液,再藉由100X物鏡將1064 nm波長的釹-釔石榴石雷射光束聚焦於光滑銅試片上,以滑軌平台引導雷射路徑,建構出所欲圖形。此金屬微結構成型技術結合天然蝕刻液及雷射引導沉積兩種特性,並在先前的研究中發現金屬銅沉積〈線寬,厚度〉與雷射功率、掃描速度的倒數及掃描重複次數間存在正相關性。
為了確保本微結構技術能在有效預測下進行製程反應,故藉由現有的實驗之各種參數〈雷射功率、掃描速度〉,採取傅立葉熱傳導公式建立金屬銅表面受到移動點熱源影響的溫度分佈範圍,並以模擬結果找出試片表面殘留溫度趨勢,從雷射焦點通過一條固定的參考線,將所得的溫度-時間歷程圖推知沉積反應能量之需求。實驗結果推算出能觸發蝕刻溶液的銅離子的反應溫度門檻大約為450K,所需的能量為100pJ/μm3。
摘要 I
Abstract II
誌謝 III
List of Figures VI
List of Tables X
Chapter 1 Introduction 1
1-1 Background 1
1-2 Motivation and objective 2
1-3 Literature review 3
1-3-1 Laser-assisted chemical liquid phase deposition 4
1-3-2 Simulation of moving thermal spot 5
Chapter 2 Experimental method 21
2-1 Culturing T. ferrooxidans Metabolite 21
2-2 Optical system setup 22
2-3 Specimen preparation 23
2-4 Processing parameters and factors 24
Chapter 3 Simulation method 31
3-1 Thermal Model 31
3-2 Laser focus size and Working energy 34
3-3 Reference line and Accumulated energy 36
Chapter 4 Results and Discussions 44
4-1 Experimental results 44
4-1-1 Deposition composition 44
4-1-2 Deposition line width 44
4-2 Simulation results 46
4-2-1 Surface Temperature distribution 47
4-2-2 Reference line of Energy accumulation 47
4-3 Comparison of experimental and simulation results 49
Chapter 5 Conclusion and Recommendation 66
5-1 Conclusion 66
5-2 Recommendation 67
Reference 68
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