3D IC矽穿孔(Through Silicon Via, TSV)封裝技術是被看好為下一世代的封裝主流，有別於傳統的平面封裝方式，3D IC是將導線經由矽穿孔(TSV)直接穿過晶片與下層接點導通，使得原本在平面封裝必須要走的路徑，改成立體堆疊的封裝方式，便可以從垂直方向較短的路徑做傳輸，以提升晶片效能並降低晶片功率損耗。
TSV為3D IC技術的關鍵製程，並且其幾何參數為檢測的重點，由於光學式檢測有非破壞、且易於與其他系統整合的優點，在本論文中我們使用架構簡單、成本低的光譜式反射儀(spectroscopic reflectometry)，針對小孔徑、高密度的TSV陣列做深度檢測研究，開發了反射儀除了量測膜厚的另一項應用。
從實驗量到的反射光譜訊號，我們利用濾波器分離出訊號的高頻分量以及低頻分量，從低頻分量我們可以從理論反射光譜擬合出氧化層遮罩的厚度，從高頻分量我們使用快速離散傅立葉轉換演算法(FFT)，解出TSV的深度；這裡我們避開了運算量大的嚴格耦合波理論RCWA以及有限時域差分法FDTD，從側向干涉理論(lateral interference)以及薄膜理論(thin-film theory)建立我們的理論模型計算模擬反射光譜，從反射光譜我們可以進一步獲得準確的TSV幾何參數。
除了深度檢測，我們也提出橢球模型(Oblate spheroid model)描述TSV的底部形貌，從CCD的距離解析能力以及入射光的有效反射面積，我們可以得到橢球的短軸，以一個扁橢球將TSV的底部形貌描述出來。

摘要 I
誌謝 Ⅱ
目錄 Ⅲ
第一章 緒論 1
1-1 3D IC簡介 1
1-2 研究動機與目的 4
第二章 文獻回顧 6
2-1 干涉儀應用在蝕刻深度檢測 6
2-2 橢偏儀應用在蝕刻深度檢測 11
2-3 傅立葉紅外反射儀(FTIR)應用在蝕刻深度檢測 14
第三章 理論背景與模擬 18
3-1 理論背景 18
3-2 理論模擬 29
3-3 光譜式反射儀設備簡介 59
3-4 模擬及分析軟體簡介 62
第四章 量測結果及討論 63
4-1 圓孔TSV結構量測結果(週期10um-深寬比13-直徑5um圓孔) 64
4-2 方孔TSV結構量測結果(週期10um-深寬比8-邊長5um方孔) 69
4-3 橢球模型 (Oblate spheroid model) 76
第五章 結論與建議 79
參考文獻 81
附錄 83

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