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作者(中文):葉俊麟
作者(外文):Yeh, Chun-Lin
論文名稱(中文):雷射二極體與光波導對準耦合器之設計
論文名稱(外文):Design of Aligning Coupler between Laser Diode and Optical Waveguide
指導教授(中文):王立康
指導教授(外文):Wang, Li-Karn
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學號:9766529
出版年(民國):99
畢業學年度:98
語文別:中文
論文頁數:60
中文關鍵詞:積體光學光波導錐形耦合器雷射二極體對準容忍度
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由於近年來光通訊產業的蓬勃發展,為了達到提升元件的性能與穩定性,並降低其製作成本、縮小元件體積等目的,積體化光電學元件所扮演的角色日益重要。本論文主要在是在探討在矽晶圓上設計雷射二極體與光波導對準耦合器(Aligning Coupler between Laser Diode and Optical Waveguide),並藉此提升元件封裝時的對準容忍度以及耦合的效率。
我們利用目前最具知名度之一的BPM(Beam propagation method)光學模擬軟體來輔助元件的設計,元件的設計與模擬可分為三大部分:單模波導的尺寸最佳化設計、透鏡與光源距離最佳化以及錐形光波導耦合器結構之最佳化設計,藉此得到較高之耦合效率與對準容忍度。當我們找出最佳化的耦合條件後,便開始著手將元件製造出來,首先利用PECVD沉積薄膜,藉由調整製程氣體SiH4與N2O的流量來控制沉積薄膜的折射率製作波導的披覆層與導光層,並於其上蒸鍍一層Cr金屬層作為後續蝕刻製程的遮罩,接下來透過黃光微影製程定義出我們所設計的波導結構,藉由RIE乾式蝕刻將其實現出來。後續藉由SEM(Scanning electron microscope)來確認蝕刻後的元件結構,經確認其尺寸與形狀符合原始之設計後,接著便要嘗試將雷射二極體與我們所製作的耦合器進行封裝,量測分析實際情況與模擬結果做驗證。
第一章 序論................................................1
1-1前言....................................................1
1-2光耦合元件..............................................2
1-2.1透鏡耦合器.........................................2
1-2.2錐形耦合器.........................................4
1-2.3光柵耦合器.........................................5
1-3研究動機和目的..........................................7
1-4論文架構................................................8
第二章 理論與原理..........................................9
2-1平面波導理論............................................9
2-2有限差分光束傳播法原理.................................14
2-3電漿輔助式化學氣相沉積原理.............................17
2-4電子束蒸鍍原理.........................................19
2-5反應式離子蝕刻原理.....................................20
第三章 模擬與分析........................................22
3-1單模通道式波導模態分析.................................23
3-2雷射二極體與波導耦合模擬分析...........................25
3-2.1透鏡聚焦的最佳化模擬分析..........................26
3-2.2結合錐形耦合器完整模擬分..........................30
3-2.3透鏡曲率為100μm之錐形耦合器最佳化模擬分析........32
3-2.4透鏡曲率為200μm之錐形耦合器最佳化模擬分析........33
3-2.5透鏡曲率為300μm之錐形耦合器最佳化模擬分析........36
第四章 元件製作..........................................39
4-1製程流程簡介...........................................39
4-2製程細部介紹...........................................42
4-2.1晶片清洗..........................................42
4-2.2薄膜沉積..........................................43
4-2.3製作Cr遮罩層......................................45
4-2.4蝕刻導光層........................................47
4-2.5透鏡結構製作......................................50
4-3耦合效率量測...........................................55
第五章 結論..............................................56
參考文獻..................................................58
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