近年來，由於通訊產品的推陳出新，使得功率元件的需求大幅增加。為了順應電路積體化的潮流，將功率元件與低壓電路整合在同一晶片上，LDMOSFET是平坦化製程的功率元件，主要應用在商業通訊的和射頻電路上，因此在設計高頻積體電路時，一個準確的電晶體模型，能精確的提供電路設計者元件的各種特性，是達成設計電路成功很重要的一環。
本論文利用0.25μm的BCD製程的LDMOSFET，設計出操作在900 MHz之射頻收發切換開關及元件，利用直流高頻量測方法，萃取LDMOSFET電晶體外部寄生元件參數，再經由矩陣轉換求得內部本質元件參數，進而建立功率元件的小訊號等效模型。另外以LDMOSFET 電晶體來設計高功率、低損耗之射頻收發切換開關，使用萃取後的功率元件參數，來建立射頻收發切換開關的等效電路，模擬射頻收發切換開關的工作原理，可看出S參數模擬與量測結果的有一致的表現性。本論文中使用0.25μm的LDMOSFET 製程設計的功率元件，在900MHz時可達到增益為10.2dB和16.7 dBm的P1dB，最大輸出功率可達到28 dBm，射頻收發切換開關在900MHz 可達到29 dBm的P1dB，1.0 dB以下的插入損耗及20 dB的隔離度，線性度 (IIP3) 達25 dBm。

In recent years, following the introducing of state of the communication products, demands for power devices have risen substantially. In keeping with the trend of circuit integration, traditional vertical device needs to be changed to lateral structure to make it possible for the integration of power devices and low voltage circuit on the same chip. LDMOSFET transistor is one of the most important high power devices for commercial communication applications and RF circuit. It is very important to set up an accurately model which contains the high frequency and it is helpful to design a RF circuit composed of these transistors.

This thesis contains both the small-signal modeling methods of RF LDMOSFET device. Utilizing high frequency measurement method, extrinsic parameters of device can be extracted. And then using matrix operation method to obtain intrinsic parameters of the device, and set up the small-signal equivalent model of the transistor and this thesis presents comprehensive methods for the application of RF LDMOSFET Transmit/Receive switch with high power-handling capability and low insertion loss and Utilizing extracted parameters of LDMOSFET device and set up the equivalent model of the RF Switch Circuit. The model simulates the operation modes of RF Switch Circuit. The good agreement between measured and modeled S parameters justifies the accuracy of our equivalent circuit model.

RF power device based on a 0.25μm LDMOSFET process at 900MHz. The measured performance of gain up to 10dB, input 1-dB compression point of 16.7dBm and the power output up to 27dBm can be achieved. The RF switch circuit implemented using 0.25μm LDMOSFET transistors for 900MHz wireless application have been present. In particular, 900MHz switch with the measured insertion loss less than 1 dB, isolation up to 20dB and input third-order intercept point of 25 dBm.

目錄
Chapter1 簡介
1.1 無線通訊簡介
1.2 研究動機
1.3 論文架構

Chapter2 射頻收發切換開關之原理
2.1 簡介
2.2 參數說明
2.3 S參數的定義
2.4 插入損耗
2.5 隔離度
2.6 P1dB 壓縮點及交互調變失真
2.6.1 輸出P1dB增益壓縮點
2.6.2 交互調變失真

Chapter3 射頻收發切換開關元件之設計
3.1 射頻功率元件簡介及工作原理
3.2 切換開關元件等效電路模型建立
3.3 射頻功率元件量測和參數萃取
3.3.1 切換功率元件的直流分析
3.3.2 射頻功率元件的高頻分析
3.3.2.1 Pad效應的扣除
3.3.2.2 等效模型的參數萃取
3.3.2.3 模擬值與量測結果
3.4 切換開關元件的分析
3.4.1 元件的插入損耗及隔離度
3.4.2 模擬值與量測結果

Chapter4 射頻收發切換開關電路之設計
4.1 工作原理
4.2 開關電路等效電路模型
4.2.1 訊號傳輸模式
4.2.2 訊號接收模式
4.2.3 插入損耗與隔離度的量測結果
4.3 線性度的量測
4.3.1 射頻功率元件線性度量測
4.3.2 射頻切換電路線性度量測

Chapter5 討論及分析
5.1 改善電路的隔離度
5.2 改善非對稱性LDMOSFET-based的架構
5.3 結論

參考文獻

參考文獻
[1] S.C Harsany, Princilples of Microwave Technology,New Jersey ,Prentice-Hall 1997.

[2] G.Gonzales,Microwave transistor amplifiers analysis and design, Second ed. Prentice-Hall,1997.

[3] Feng-Jung Huang and Kenneth O,A 0.5-μm CMOS TR Switch for 900-MHz Wireless Applications, IEEE Journal of Solid-State Circuit, Vol . 36, NO. 3, MARCH 2001.

[4] Yalin Jin and Cam Nguyen, A 0.25-mm CMOS T/R Switch for UWB Wireless Communications, IEEE Microwave And Wireless Components Letters, Vol. 15, NO. 8, August 2005.

[5] Chang-Ching Wu; Yen, A.; Jen-Chung Chang, A 0.13μm CMOS T/R Switch Design for Ultrawideband Wireless Applications, IEEE Circuits and Systems, 2006. ISCAS 2006.

[6] Qiang Li, Member, IEEE, and Y. P. Zhang, CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency and Higher Frequency, IEEE J. Solid-State Circuits, VOL. 42, NO. 3, March 2007.

[7] Wen Wu, , Sang Lam, and Mansun Chan, A Wide-Band T/R Switch Using Enhanced Compact Waffle MOSFETs, IEEE Microwave And Wireless Components Letters , Vol .16, NO. 5, May 2006.

[8] Tadanori Yamaguchi and Seiichi Morimoto, “Process and device design of a 1000-V MOS IC”, IEEE Trans. Electron Devices, Vol. ED-29, No. 8, pp. 1171-1178, August 1982.

[9] Jeonghu Han, Minkyu Je, and Hyungcheol Shin, A Simple and Accurate Method for Extracting Substrate Resistance of RF MOSFETs, IEEE Electron Device Letters , Vol. 23, NO. 7, July 2002.

[10] Jyh-Chyurn Guo and Yi-Min Lin, A New Lossy Substrate Model for Accurate RF CMOS Noise Extraction and Simulation With Frequency and Bias Dependence IEEE Transactions on Microwave Theory and Techniques , Vol. 54, NO. 11, November 2006.

[11] Jyh-Chyurn Guo and Yi-Min Lin, A New Lossy Substrate De-Embedding
Method for Sub-100 nm RF CMOS Noise Extraction and Modeling, IEEE Transactions on Electron Devices, Vol. 53, NO. 2, February 2006.

[12] 楊渝澤,”應用於矽製程的去嵌入技術、電感及接觸墊之研究”碩士論文 國立中央大學電機工程研究所 2003.

[13] Seonghearn Lee; Hyun Kyu Yu, Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs, IEEE High Speed Semiconductor Devices and Circuits, Proceedings, 1997 IEEE Cornell Conference on Advanced Concepts in 4-6 Aug. 1997.

[14] David Lovelace, Julio Costa and Natalino Camilleri, Extracting Small Signal Model Parameters of Silicon MOSFET Transistors, IEEE Microwave Symposium Digest, May 1994.

[15] Sorin P. Voinigescu', Mihai Tazlauanu2, P.C. Ho', and M.T.Yang, Direct Extraction Methodology for Geometry-Scalable RF-CMOS Models, IEEE 2004 Int. Conference on Microelectronic Test Structures. Val 17. March 2004.

[16] Seonghearn Lee, Hyun Kyu Yu, Cheon Soo Kim, Jin Gun Koo, and Kee Soo Nam, A Novel Approach to Extracting Small Signal Model Parameters of Silicon MOSFET’s, IEEE Microwave And Guided Wave Letters, Vol. 7, NO. 3, March 1997.

[17] Yuhua Cheng, M. Jamal Deen, and Chih-Hung Chen, MOSFET Modeling for RF IC Design, IEEE Transactions of Electron Device, VOL. 52, NO.7, July 2005.

[18] Jaejune Jang; Tornblad, O., Arnborg, T., Qiang Chen; Banerjee, K., Zhiping Yu; Dutton, R.W, RF LDMOS characterization and its compact modeling, IEEE Microwave Symposium Digest, Volume 2, 20-25 May 2001.

[19] Steve Hung-Min Jen, Christian C. Enz, David R. Pehlke, Michael Schr¨oter, and Bing J. Sheu, Accurate Modeling and Parameter Extraction for MOS Transistors Valid up to 10 GHz , IEEE Transactions On Electron Devices, Vol. 46, NO. 11, November 1999.
[20] Ickjin Kwon, Student , Minkyu Je, Kwyro Lee, and Hyungcheol Shin, A Simple and Analytical Parameter-Extraction Method of a Microwave MOSFET, IEEE Transactions on Microwave Theory and Techniques, Vol. 50, NO. 6, June 2002.

[21] Minkyu Je, Jeonghu Han, Hyungcheol Shin , Kwyro Lee, A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction, Microelectronics Reliability Volume 43, Issue 4, April 2003.

[22] Tajinder Manku, Microwave CMOS Device Physics and Design, IEEE J. Solid-State Circuits, Vol. 34, NO. 3, March 1999.

[23] Heng-Ming Hsu, Jiong-Guang Su, Chih-Wei Chen, Denny D. Tang, Chun Hsiung Chen, and Jack Yuan-Chen Sun, Integrated Power Transistor in 0.18 μm CMOS Technology for RF System-on-Chip Applications, IEEE Transactions on Microwave Theory and Techniques, Vol. 50, NO. 12, December 2002.

[24] Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang; Chun-Yen Chang, Cheng-Chou Hung, Liang, V., Bo-Yuan Chen,Design for Integration of RF Power Transistors in 0. 13μm Advanced CMOS Technology, IEEE Microwave Symposium, 2007. IEEE/MTT-S International 3-8 June 2007.

[25] 呂國培,”LDMOS 功率電晶體元件設計、特性分析 及其模型之建立”碩士論文 國立中央大學電機工程研究所 2000.

[26] 高誌陽,”橫向擴散的射頻金氧半場效電晶體之特性分析與模型建立”, 碩士論文, 國立交通大學 電子研究所 2009.

[27] Ta, C.M.; Skafidas, E.; Evans, R.J,A 60-GHz CMOS Transmit/Receive Switch
, IEEE Radio Frequency Integrated Circuits Symposium, June 2007.