|
[1] S. Iijima, Nature 354, 56 (1991). [2] J. Kong , A. M. Cassell, and H.Dai, Chem. Phys. Lett. 292,567 (1998). [3] A. Javey, J. Guo, Q.Wang, M. Lundstrom, and H. J. Dai, Nature 424, 654(2003) [4] S. Frank, S. P. Poncharal, Z. L. Wang, and W. A. deHeer, Science 280,1744(1998) [5] M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R.E. Smalley, L. Balents, and P. L. MacEuen, Nature 398, 598(1999) [6] S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature 393, 49 (1998). [7] S. M. Bachilo, M. S. Strano, C. Kittrell, R. H. Hauge, R. E. Smalley, and R. B. Weisman, Science 298, 2361 (2002). [8] R. H. Baughman, A. A. Zakhidov and W. A. de Heer, Science 297, 787 (2002). [9] L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990). [10] A. M. Morales and C. M. Lieber, Science 279, 208(1998). [11] S. W. Chung, J. Y. Yu, and J. R. Heath, Appl. Phys. Lett. 76, 2068 (2000). [12] Y. Cui and C. M. Lieber, Science 291, 851 (2001). [13] Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003). [14] J. Goldberger, A. I. Hochbaum, R. Fan, and P. Yang, Nano Lett. 6, 973 (2006). [15] P. D. Yang, H. Q. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. R. He, and H. J. Choi, Adv. Funct. Mater. 12, 323 (2002). [16] Y. J. Xing, Z. H. Xi, Z. Q. Xue, X. D. Zhang, J. H. Song, R. M. Wang, J. Xu, Y. Song, S. L. Zhang, and D. P. Yua, Appl. Phys. Lett. 83, 1689 (2003). [17] Z. Y. Fan and J. G. Lu, Appl. Phys. Lett. 86, 032111 (2005). [18] Lao CS, Liu J, Gao PX, et al, Nano Lett. 6 , 263-266 (2006). [19] C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, H. L. Liu, J. J. Wu, K. H. Chen, L. C. Chen, J. Y. Peng, and Y. F. Chen, J. Am. Chem. Soc. 123, 2791 (2001). [20] J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H. J. Choi, and P. Yang, Nature 422, 599 (2003). [21] J. R. Kim, H. M. So, J. W. Park, J. J. Kim, J. Kim, C. J. Lee and S. C. Lyu, Appl. Phys. Lett. 80, 3548 (2002). [22] K. E. Spear, J Am. Cerum. SOC. 72, 171 (1989). [23] L.S. Pan, D.R. Kania, Diamond: Electronic Properties and Applications, Kluwer Academic Publishers, Boston, 1995. [24] I. L. Krainsky and V. M. Asnin, Appl. Phys. Lett. 72, 2574 (1998). [25] R. Kalish, J. Phys. D: Appl. Phys. 40, 6467 (2007). [26] G. Brezeanu, PROCEEDINGS OF THE ROMANIAN ACADEMY, Series A 8,000 (2007). [27] G.S. Gildenblat, S.A. Grot, and A. Badzian, Proc. IEEE 79, 647 (1991). [28] E. Kohn, M. Kubovic, F. Hernandez-Guillen, and A. Denisenko, 12th GAAS Symposium-Amsterdam, 559 (2004). [29] E. Kohn, J. Kusterer, and A. Denisenko, IEEE MTT S INTERNATIONAL MICROWAVE SYMPOSIUM 2, 901 (2005) [30] S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda, Science 292, 1899 (2001) . [31] H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, and H. Kawarada, IEEE Electron Device Lett. 21, 390 (2001). [32] Y. Gurbuz, O. Esame, I. Tekin, W. P. Kang, and J. L. Davidson, Solid-State Electron. 49, 1055 (2005). [33] M. W. Geis, J. C. Twichell, J. Macaulay, and K. Okano, Appl. Phys. Lett. 67, 1328 (1995). [34] H. Shiomi, Jpn. J. Appl. Phys. 36, 7745 (1997). [35] E. S. Baik, Y. J. Baik, and D. Jeon, Diamond Relat. Mater. 8, 2169 (1999). [36] E. S. Baik and Y. J. Baik, J. Mater. Res. 15, 923 (2000). [37] S. Okuyama, S. I. Matsushita, and A. Fujishima, Langmuir 18, 8282 (2002). [38] W. J. Zhang, Y. Wu, W. K. Wong, X. M. Meng, C. Y. Chan, I. Bello, Y. Lifshitz, and S. T. Lee, Appl. Phys. Lett. 83, 3365 (2003). [39] Q. Wang, J. J. Li, Y. L. Li, Z. L. Wang, C. Z. Gu, and Z. Cui, J. Phys. Chem. C 111, 7058 (2007). [40] H. Masuda, T. Yanagishita, K. Yasui, , I. Yagi, T. N. Rao, and A. Fujishima, Adv. Mater. 13, 247 (2001). [41] T. Yanagishita, K. Nishio, M. Nakao, A. Fujishima, and H. Masuda, Chem. Lett. 10, 976 (2002). [42] Y.K. Chih, C.H. Chen, J. Hwang, A.P. Lee, and C.S. Kou, Diamond and Related Materials 13, 1614 (2004). [43] Y. K. Chih, J. Hwang, A. P. Lee, and C. S. Kou, J. Crystal Growth 283, 367 (2005). [44] M. Y. Chen, K. Y. Wu, J. Hwang, M. T. Chang, L. J. Chou, and C. S. Kou, Nanotechnology 18, 455706 (2007). [45] T. Tachibana, B. E. Williams, and J. T. Glass, Phys. Rev. B45, 11975-11981(1992). [46] K. L. Moazed, J. R. Zeidler, M. J. Taylor, J. Appl. Phys. 68, No.5,1(1990). [47] K. L. Moazed, Richard Nguyen, and James R. Zeidler, IEEE Electron Device Letter 9, No I(1998). [48] M. D. Bell and W. J. Leivo, Phys. Rev. 111, 1227(1958). [49] G. H. Glover, Solid-State Electron 16, 973(1973). [50] G. Sh. Gildenblat, S. A. Grot, C. R. Wronski, A. R. Badzian, and T. Bad T. Badzian, Appl. Phys. Lett. 53, 586(1988). [51] J.Y. Lin, W. K. Lin, J. Y. Gan, J. C. Hwang and C. S. Kou, Nanotechnology 22, 205707(2011). [52] 李正中,薄膜光學鍍膜技術,藝軒圖書出版社(2009)。 [53] 國科會精密儀器發展中心,真空技術與應用,全華科技(2004) [54] Jon Orloff, Lynwood W. Swanson, and M. Utlaut.High, Resolution Focused Ion Beam: FIB and Its Applications, KA/PP. [55] 汪建民, 材料分析,中國材料科學學會:(2005)。 [56] Hans Jorg Mathieu, “Surface Analysis-the principle techniques”, 99(1999). [57] Jon Orloff, Lynwood W. Swanson, and M. Utlaut.High, Resolution Focused Ion Beam: FIB and Its Applications, KA/PP. [58] 郭正次,朝春光,奈米結構材料科學,全華:(2004)。
|