This article reports the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were then deposited by DC magnetron sputtering onto intermediate graphene layer readily transferred onto the silicon substrate. The quality and structural characteristics of the graphene and AlN films were carefully inspected. Highly c-axis-oriented AlN crystal structures are observed via XRD patterns.
本文以反應性磁控濺射濺鍍法(reactivemagnetron sputter)將氮化鋁薄膜(AlN film)磊晶成長於自製石墨烯薄膜(graphene films)上。首先通過化學氣相沉積法(Chemical Vapor Deposition)合成石墨烯薄膜,然後再轉印到矽基板,並透過場效發射式掃描電子顯微鏡(FE-SEM),針對薄膜表面特徵及晶粒成長進行觀察,並以拉曼光譜儀進行分析。最後,更以反應性磁控濺射,磊晶氮化鋁薄膜於石墨烯以及矽基板間,作為中間矽層基板,並對氮化鋁薄膜和石墨烯的結構和特性進行了調查。由結果得知,以石墨烯作為過渡層的X射線繞射圖(XRD),具有高度C軸取向的晶體結構與優良品質。
為了持續優化網站功能與使用者體驗,本網站將Cookies分析技術用於網站營運、分析和個人化服務之目的。
若您繼續瀏覽本網站,即表示您同意本網站使用Cookies。