在底層電極上以常溫成長氮化鋁薄膜之研究

The Study of AIN Thin Film Grown on Bottom Electrode under Room Temperature Condition

黃靜茹(J. L Hwang) ； 黃興祿(H. L. Huang) ； 陳亮斌(L. B. Chen) ； 謝光宇(K. Y. Hsieh)

《材料科學與工程》 34卷1期 (2002/03) Pp. 55-60

https://doi.org/10.6409/JMSE.200203.0055

摘要

為配合體波元件的製作，本實驗利用反應式射頻磁控濺鍍法在矽單晶以及玻璃基板上先行沉積金屬鋁作為底層電極，而後再長C軸取向的氮化鋁薄膜，在三套不同濺鍍系統中基板不加熱為其基本共通點，調配基板偏壓，濺鍍壓力，濺鍍功率，氮氣濃度等參數，以求得最佳成長條件。實驗中藉由x光繞射技術決定薄膜的晶面取向，掃描式電子顯微鏡用來觀察薄膜的緻密度以及平整度，穿透式電子顯微鏡則是用來觀察薄膜之微觀結構。實驗數據顯示在長距離(17cm)的濺鍍系統中，在適當的濺鍍功率，濺鍍壓力下以及配合施加基板偏壓成功長出高平整度之c軸取向的氮化鋁膜，並藉由7cm長的濺鍍系統證實提供基板偏壓值可加強c軸晶面成長。TEM的觀察得知所沉積的氮化鋁薄膜，其微結構呈柱狀，底層鋁和氧化鋁之間存有過渡層，薄膜初期呈現紊亂的結晶方向，隨著厚度增加，晶粒尺寸逐漸增大最後形成以c軸為主的柱狀結晶晶粒。

關鍵字

磁控濺渡 ； 氮化鋁 ； 柱狀結構

並列摘要

In this study, highly C-axis oriented AIN thin films stacked upon Al bottom electrode on Si and glass substrate are deposited with Reactive RF magnetron sputtering technique. Three different sputtering systems were utilized to evaluate the optimized growth parameters. Room temperature growth was applied to the all system. The substrate bias condition, sputtering work pressure, sputtering power and N2 concentration are those key parameters to be adjusted in order to gain high quality films. The crystallography of the films was analyzed by X-ray diffraction (XRD). Film surface morphology was examined by SEM. Meanwhile, TEM was adopted to observe the microstructure and to determine the grain size of the film. The experimental results showed that in a 17cm long sputtering working distance condition, the AIN (002) can be obtained and the peak intensity can be increased when the sputtering power was fixed meanwhile reduced the working pressure and applied the negative bias on the substrate. The micrography of the TEM reveals that there is a transition region between Al metal and AIN film. Fine and random orientation column structures can be observed in the initial growth stage. The size of grain increased as the film became thicker and C-axis orientated AIN films were formed after the thickness over the critical thickness.

並列關鍵字

Magnetron sputtering ； AIN ； Column structure