VO2薄膜成長於ZnO緩衝層之微觀結構觀察

Yhe Micro Structures Analysis of VO2 Thin Films Deposited on the ZnO Buffer

邱德威(T.W. Chiu) ； 洪瑞騰(R.T. Hong) ； 陳儀安(Y.A. Chen) ； 外岡和彥(Kazuhiko Tonooka) ； 菊地直人(Naoto Kikuch)

《鑛冶：中國鑛冶工程學會會刊》 56卷1期 (2012/03) Pp. 89-94

https://doi.org/10.30069/MM.201203.0007

摘要

利用c面氧化鋅（ZnO）作為緩衝層，成功地在玻璃基板上製備具有b軸優先配向的二氧化釩（VO2）薄膜。本研究藉由穿透式電子顯微鏡（transmission electronmicroscope, TEM）觀察薄膜之截面結構，以了解ZnO緩衝層與VO2之間的介面關係。於TEM分析結果中發現，當ZnO緩衝層厚度為5 nm時，VO2晶粒以（020）面呈b軸配向成長，並且當VO2達到一定厚度時（約90 nm）則會形成角錐狀晶粒結構；當ZnO緩衝層厚度為100 nm時，可發現ZnO緩衝層與VO2薄膜之間存在一具有連續性的之介面層（interface layer），經TEM分析發現此介面層的晶相為V3O5，並且V3O5呈a軸配相成長，並且由X-ray光電子能譜儀（X-ray photoelectron spectrometer, XPS）之縱深分析結果得知介面層之V2p峰符合V3O5之結果，為V4+與V3+混和氧化態之晶體。各層之介面更利用CaRIne軟體模擬建立VO2-V3O5及V3O5-ZnO之間的接面關係。

關鍵字

VO2 ； ZnO ； 介面層 ； V3O5 ； XPS ； TEM

並列摘要

The preferentially b-axis oriented VO2 thin films were formed on a glass substrate via a ZnO buffer by pulsed laser deposition. Transmission electron microscopy (TEM) was used to observe the cross section images of the VO2 thin films. When the VO2 thin films were deposited on 5-nm thick ZnO buffer, only b-axis oriented VO2 layer was observed. The b-axis oriented VO2 layer shows a columnar structure. When thicker VO2 thin films (~90 nm) were deposited on 5-nm ZnO buffer, a VO2 (111) facet on grain and amorphous VO2 residue were observed. When VO2 thin films were deposited on relatively thick ZnO buffer (~70 nm) an interface layer was formed between VO2 layer and ZnO buffer. The interface layer was V3O5 as determined by X-ray diffraction and TEM high resolution images. These observations implied that the grain of VO2 grew from the interface with ZnO buffer and the rate of grain growth was slower than that of deposition. The lattice relationship between VO2-V3O5 and V3O5-ZnO was established by CaRIne simulation.

並列關鍵字

VO2 ； ZnO ； V3O5 ； XPS ； TEM interface layer