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Electron Capture from Silicon by Protons
並列摘要
The differential cross sections for the capture of the electrons from silicon foil by protons of energy between 100 Kev to 6 Mev into Is, 2 s, 2 p hydrogen states have been calculated in the Born approximation and the significance of the results is discussed. A phenomenological but universal scaling law is proposed.
並列關鍵字
無資料延伸閱讀
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