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Broadening of the Absorption Line of Aluminum Impurities in Silicon
並列摘要
The absorption spectrum of aluminum impurities in silicon has been measured at Various low temperatures for samples of various impurity concentrations. Experimental results indicate that the broadening of the absorption line can be attributed to five broadening contributions: internal strain, external strain, phonon, concentration and ionized impurity. The internal strain broadening due to dislocations, the external strain broadening due to sample mounting and the concentration broadening are all temperature independent. The temperature dependence of the phonon broadening is found in good agreement with the Barrie-Nishikawa theory. Experimental results also show that the ionized impurity broadening starts at -55°K and depends on both temperature and concentration.
並列關鍵字
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