The magnetoresistance and magnetization of amorphous Fe80-xMnxB14Si6 ,(x = 0, 2, 4, 6, 10,12), Fe80-xMoxB14Si6 (x = 2, 4, 6, 8) and Fe80-x Vx B14Si6(x = 2, 4,6,8)alloy system have been investigated at both 300K and 77K in an applied magnetic fields up to 6 kG. If FAR (T) is the value of the ferromagnetic anisotropy of the electrical resistivity at absolute temperature T and µ(T) is the averaged magnetic saturation moment per Fe atom at T K, then our experimental results suggest that in the strong-ferromagnetic state, the FAR have values of FAR(300) = Aµ(0)^m ; with A = (1.1 ± 0.2) X 10”, and m = 7.9 ± 0.1FAR(77) = Aµ(0)^m ; with A = (1.2 ± 0.2) X 10^(-4),and m = 5.3 ± 0.1FAR(T) = Aµ(T)^m; with A = (3.8 ± 0.3) X 10^(-4),And m=3.7±0.2