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- OpenAccess
On the Modelling of the Transport Phenomena during Crystal Growth from Vapors
並列摘要
The fundamental modelling works of the transport phenomena during crystal growth from vapors in open flow and closed tube systems are reviewed. Emphasis is put on recent developments in horizontal chemical vapor deposition (CVD). The experimental and numerical studies of the effects from entrance lengths, sidewall, thermal diffusion, and forced flow versus buoyancy-driven flow are described. The numerically calculated growth rate distribution were compared with published experimental data. It had been shown that the uniformities in thickness and composition of the as-grown layer are strongly influenced by the flow patterns in the mass transport controlled regime. Hence the study of the transport phenomena is very important to the reactor design and the choice of the growth conditions.
並列關鍵字
無資料延伸閱讀
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