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Control and Application of Epitaxial CeO2 Layer Growth for High Tc Superconducting Thin Films
並列摘要
CeO2 thin films, an ideal buffer later material for high-temperature superconductors, have been successfully grown on a variety of substrates using pulsed laser ablation. We have been able to control and understand the in-plane epitaxial alignment between CeO2 and the substrates, which in turn led us to prepare high quality epitaxial YBCO films, and, in addition, produce artificial grain boundary by choosing appropriate substrates. The technique holds promise for planar Josephson junction devices.
並列關鍵字
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- 李卿瑋（2014）。Epitaxial GeSn Formed on Ge Substrate by Solid Phase Epitaxy and Its Application to MOS Devices with Sub-nm EOT〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2014.00315
- 解宗翰（2012）。Strain Effect on Semiconductor Epitaxial Layer〔碩士論文，淡江大學〕。華藝線上圖書館。https://doi.org/10.6846/TKU.2012.00637
- Su, Y. H. (2017). Epitaxial growth of Ge on In0.51Ga0.49P/GaAs (100) substrate by ultra-high vacuum chemical vapor deposition [master's thesis, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-0705201811530640
- Lee, C. H. (2011). SiGe Epitaxial Growth by Ultra-high Vacuum Chemical Vapor Deposition and the Advanced Device Applications [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2011.00316
- Ci, J. W. (2021). Study on the epitaxial lateral overgrowth of Ge on Si substrate by liquid phase epitaxy [doctoral dissertation, Chung Yuan Christian University]. Airiti Library. https://doi.org/10.6840/cycu202100989