The Inverted Cylindrical Magnetron Sputtering (ICM) is a reliable and reproducible method for the production of HTS thin films. This allows systematic studies of film growth as a function of various deposition parameters including deposition rate, substrate temperature (Ts), film thickness, substrate and buffer layer material. The demand for complex superconducting devices required a further development of the sputtering deposition technique. Examples are large area and double-sided coatings and the realization of deposition at reduced oxygen partial pressure using metallic alloy targets. We report on such developments and on the growth of films with different orientation (e.g. u-axis films) and on the growth of buffer layers of YSZ, CaTiO3 and CeO2 on R-plane sapphire.