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Flux Pinning in Bi-2212 Single Crystals with Various Oxygen Concentrations

並列摘要


By systematic variation of the oxygen concentration it is demonstrated that the oxygen vacancies in the CuO2 planes are indeed the predominant pinning centers in Bi2Sr2CaCu2Oδ+6 (Bi-2212) single crystals. Both the critical current density and the pinning energy increase proportional to the square root of the vacancy concentration. We also show that a change of the superconducting parameters upon annealing, predominantly of λL(0), gives rise to a considerable decrease of the critical current.

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