Insulating Modifications in Cold Deposited Films of Metals

Experiments show that the onset of electrical conductivity in cold deposited films of some metals (Pb, Hg and Ga) is strongly dependent on the substrate material. Thus, in films on glass substrates the thickness of the conductivity onset dco is more than 20 atomic layers, at the same time, in films deposited onto predeposited layer of SiO or Ge dco is about 10 times smaller. Our experiments show that high thickness values of the conductivity onset are due to formation of metastable insulating modifications of these metals. We propose also the model of the insulating state. In this model the film consists predominantly of diatomic metallic molecules.

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Lin, L. K. (2014). 橫向鐵磁(鎳鐵)/超導(鈮)接面系統與逆鄰近效應之研究 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2014.00049

Shen, Y. T. (2013). 鐵硒碲與金的C軸方向穿隧元件中電導能譜與超導能隙結構之研究 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2013.00564

Lee, C. C. (2013). 暗能量問題與重力修改理論 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2013.00204

Chiang, W. J. (2009). Silicon Nanocrystal Photosensor Integrated on Low-Temperature Poly-Silicon Display Panel [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2009.00151

賴詩韻（2014）。高品質因子及低增益閾值之受激輻射引致表面電漿子放大元件模擬特性研究〔碩士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2014.00781

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Insulating Modifications in Cold Deposited Films of Metals

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