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Spin Polarized Tunneling through a Ferromagnetic Barrier

並列摘要


We have studied the spin polarized tunneling through a ferromagnetic barrier and concluded that the magnetoresistance ratio will increase significantly. Spin-dependent barrier acts as a spin-filter and gives rise to a strong polarization of the tunneling current. For the asymmetric spin-filter tunneling junction, only a ferromagnetic electrode is required.

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被引用紀錄


Chen, K. C. (2016). 二維拓樸絕緣體的電子自旋操控 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU201603562
Liu, M. H. (2008). 電子自旋於低維系統之空間行為 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2008.00960

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