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Effect of Annealing on Physical Properties of MgB2 Thin Films

並列摘要


Effect of post annealing on superconductivity of MgB2 thin films has been investigated. On increasing the annealing time (at a temperature of 900℃) from 30 mins to 120 mins, the grain size was found to increase but the transition temperature and critical current were seen to be reduced. This is attributed to increased mis-orientation of grains caused by interaction between the film and the substrate. Evidence of film-substrate interaction was obtained from angular dependence of resistivity (ρ), measured on films annealed for 30 mins. These measurements showed increased pinning for vortices parallel to the ab-plane that is ascribed by film-substrate interaction.

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Wei, T. H. (2015). V-VI, I-III-VI2, I2-II-IV-VI4硫族化合物半導體材料電化學合成 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2015.00220
Lai, S. C. (2008). 次世代非揮發性記憶體技術之研究-電荷捕捉型NAND型快閃記憶體及低溫鐵電記憶體製程之研究 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2008.00147
王雅慧(2012)。組成及分散均勻性對LiCoO2正電極性能的影響之研究〔碩士論文,國立臺北科技大學〕。華藝線上圖書館。https://doi.org/10.6841/NTUT.2012.00428
吳良彥(2002)。濺鍍MgB2薄膜的X光吸收光譜〔碩士論文,國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-1904200715343031
張岷益(2005)。二硼化鎂超導微波濾波器設計及製作〔碩士論文,國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-2004200714364316

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