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Raman Study of Atomic Intermixing in InAs/AlAs Quantum Dots

並列摘要


We present a Raman study of self-assembled InAs quantum dots fabricated in an AlAs matrix at different growth temperatures. Raman experiments carried out under resonant and non-resonant conditions allowed us to investigate InAs-like optical phonons localized in the quantum dots. The frequencies of the optical phonons determined from the experiment are compared with those calculated for strained InAlAs quantum dots by taking into account the confinement effect. On the basis of the analysis, the composition of InAs/AlAs quantum dots grown at different temperatures is determined.

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被引用紀錄


陳炳(2001)。在矽/鍺超晶格中折疊聲學聲子之研究〔碩士論文,國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-2603200719113571

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