We present a Raman study of self-assembled InAs quantum dots fabricated in an AlAs matrix at different growth temperatures. Raman experiments carried out under resonant and non-resonant conditions allowed us to investigate InAs-like optical phonons localized in the quantum dots. The frequencies of the optical phonons determined from the experiment are compared with those calculated for strained InAlAs quantum dots by taking into account the confinement effect. On the basis of the analysis, the composition of InAs/AlAs quantum dots grown at different temperatures is determined.