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Inuence of Bias Voltage on the Associated Electrical Elements of an Ion Sheath
並列摘要
The effect of a wall potential on the sheath associated electrical elements, such as capacitance, resistance, and inductance, are estimated for real experimental parameters. The values of these elements are analyzed as a function of the applied wall potential. A parallel plate capacitor is supposed to be formed between the negatively biased grid and the positive ion space charge layer. The energy stored in such a capacitor is estimated. The capacitance of such a parallel plate capacitor is found to be almost equal to the sheath capacitance obtained from the LCR circuit model. Further, the theoretically estimated wall potential is found to be close to the potential applied in the experiment.
並列關鍵字
無資料被引用紀錄
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