並列摘要
For InAs quantum dots (QDs) grown on GaAs by molecular-beam epitaxy (MBE), we demonstrate the surface morphology and optical characteristics of dots formed under different growth temperatures of 480, 500, 520℃. From the atomic force microscopy (AFM) results, all sample exhibited two-group size distributions which are attributed to the QDs coalescence resulting from the slow cooling procedure after quantum-dot growth (~15℃/min) Simultaneously, the decrease of dots density with increasing growth temperature is attributed to the enhancement of In adatom migration length at higher growth temperature. The observation of higher-order excited state luminescence for QDs grown at 500℃ has indicated a high carrier lifetime for the photo-excited electrons. From PL results of sample B, 500℃ is the optimum growth temperature for InAs/GaAs QDs.
並列關鍵字
無資料延伸閱讀
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