- 期刊
Effects of Dot-height Uniformity on the Performance of 1.3μm InAs Quantum Dot Lasers
並列摘要
We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3μm QD laser diodes. It is found that the uniformity of dot height plays an important role in contributing to the enhancement of radiative efficiency and the narrowed linewidth of emission spectra. As-cleaved ridge laser diode prepared using the optimized dot-height uniformity exhibit low threshold current density as low as 250A/cm^2 and internal quantum efficiency as high as 63% under continuous-wave operation.
並列關鍵字
無資料被引用紀錄
王嬿婷（2012）。第二型態垂直耦合量子點覆蓋銻砷化鎵應力緩衝層之載子生命期研究〔碩士論文，元智大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0009-2801201415021884
延伸閱讀
- 王關鑑（2005）。Analysis of Dynamic Properties and Two-State Lasing Mechanisms of Quantum-Dot Lasers〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2005.02166
- 施靜宜（2010）。Size dependent optical properties of InAs/GaAs quantum dots〔碩士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2010.00882
- 邱科智（2006）。High Speed Modulation Characteristics of Quantum-Dot and Quantum-Well Lasers〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.02927
- Wu, C. H., Lin, Y. G., Tyan, S. L., Lin, S. D., & Lee, C. P. (2005). An Investigation of Quantum States in Ultra-Small InAs/GaAs Quantum Dots by Means of Photoluminescence. Chinese Journal of Physics, 43(4), 847-855. https://www.airitilibrary.com/Article/Detail?DocID=05779073-200508-201210080014-201210080014-847-855
- Lin, H. H. (2010). Measurement of the Linewidth Enhancement Factor of Quantum Dot Lasers by Four-Wave Mixing Analysis [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2010.00262