High Al Content in Al(subscript x)Ga(subscript 1-x)N on GaN Buffer/Sapphire Grown by RFMBE

黃健峻(J. J. Huang) ； 錢韋至(W. C. Chien) ； 林舜寬(S. K. Lin) ； 盧勝利(S. L. Lu) ； 蔡孟希(M. C. Tsai) ； 吳祖儀(Z. Y. Wu) ； 施博文(P. W. Sze) ； 洪茂峰(M. P. Houng) ； 王永和(Y. H. Wang)

《真空科技》 18卷3期 (2005/12) Pp. 86-90

https://doi.org/10.29808/JVSROC.200512.0020

並列摘要

In this work, we have successfully grown high quality Al(subscript x)Ga(subscript 1-x)N (400 nm) films with high Al contents (x=0.5) on sapphire (0001) substrates with GaN (150 nm) buffer layers by radio frequency molecular beam epitaxy (RF-MBE). The relationship between the film quality and different Al contents will be discussed in depth. The X-ray diffraction (XRD) 2θ peak of the AlGaN/GaN structure is 34.66 and 35.43 degree with 0.5 aluminum compositions. A degradation of the crystalline quality of AlGaN layers is observed with increasing Al contents. The 6.42 arcmin full-width at the half-maximum (FWHM) of XRD is better than those reported. The 2.985 nm surface roughness for 2μm×2μm area is measured by the atomic force microscopy (AFM).