電漿輔助原子層沉積釕與氮化鉭薄膜製程研究

Ru and TaNx Thin Films Grown by Plasma Enhanced Atomic Layer Deposition

劉柏亨(B. H. Liu) ； 蕭健男(C. N. Hsiao) ； 柯志忠(C. C. Kei)

《真空科技》 26卷1期 (2013/03) Pp. 21-26

摘要

本研究以自製感應耦合式電漿輔助原子層沉積系統製鍍釕（Ru）與氮化鉭（TaNx）薄膜，Ru前驅物為bis（Cyclopentadienyl）ruthenium（RuCp2）與Bis（Ethylcyclopentadienyl）ruthenium（RuEtCp2），還原劑為氬氧（Ar/O2）混合電漿，通入於腔體中進行氧化作用。前驅物RuCp2通入時間為0.2秒時，所製鍍之Ru薄膜成長速率約為0.01 nm/cycle，其管路呈現阻塞現象。實驗中另外使用RuEtCp2前驅物以提升反應氣體量，並於基板載台上增加直流偏壓（dc-bias），結果顯示於製程溫度300 °C時，Ru薄膜成長速率可改善至0.1 nm/cycle，電阻率亦下降至11 μΩ cm。TaNx前驅物為Ta[N(CH3)2]5（PDMAT），還原劑為氬氨（Ar/NH3）混合電漿，所製鍍之Ta3N5薄膜為N-rich之非結晶（Amorphous）結構，電阻率亦較高。Ta3N5薄膜於PDMAT通入時間2秒以上時達到飽和，其成長速率約為0.058 nm/cycle。

關鍵字

感應耦合式電漿輔助原子層沉積系統 ； 釕 ； 氮化鉭

並列摘要

The thin films of Ru and TaNx were deposited by home-built inductively coupled plasma atomic layer deposition (PEALD) system. The Ru metal-organic precursor used is bis(Cyclopentadienyl)ruthenium (RuCp2) and Bis(Ethylcyclopentadienyl) ruthenium (RuEtCp2) and introduced into chamber and then oxidized by the high energy reductive Ar/O2 plasma in this PEALD system. The growth rate of the Ru films is 0.01 nm/cycle as the RuCp2 pulse time is more than 0.2 s. However, the solid precursor RuCp2 could be jammed the piping. With increased dc-bias power of 5 W, the growth rate of the Ru films is 0.1 nm/cycle as the RuEtCp2 pulse time is 4 s. The resistivity of Ru thin film prepared at 300°C is 11 μΩ cm. PEALD of TaNx films from Ta[N(CH3)2]5 (PDMAT) and Ar/NH3 plasmas is reported. It is found that amorphous Ta3N5 films with a high resistivity can be deposited using a Ar/NH3 plasma. The growth rate of the Ta3N5 films is 0.058 nm/cycle as the PDMAT pulse time is more than 2 s.

並列關鍵字

Inductively Coupled Plasma Atomic Layer Deposition (PEALD) ； Ruthenium (Ru) ； Tantalum Nitride (TaNx)