- 期刊
原子層沉積之二氧化鉿感測薄膜於生醫感測器之應用
Hafnium Oxide Sensing Membrane by Atomic Layer Deposition for Biosensor Application
摘要
In this study, Hafnium oxide (HfO2) was used as a sensing membrane in field effect sensing devices including electrolyte-insulator-semiconductor (EIS) and ion-sensitive field-effect transistor (ISFET). For comparison, HfO2 sensing membranes were prepared by reactive radio frequency (r.f.) sputter and atomic layer deposition (ALD) to investigate the sensing performance. After rapid thermal annealing (RTA), 3.5-nm ALD-HfO2 layer has high sensitivity (59.6 mV/pH), low drift coefficient (1 mV/h) and small hysteresis (5mV), which could be a potential candidate for commercial products. In addition, CF4 plasma treatment can be processed to increase the sensitivity to sodium (Na^+) ions. To verify biosensor applications, NH3 plasma treatment was applied to ALD-HfO2 to replace traditional APTES treatment in urea sensor with acceptable performance.
並列摘要
In this study, Hafnium oxide (HfO2) was used as a sensing membrane in field effect sensing devices including electrolyte-insulator-semiconductor (EIS) and ion-sensitive field-effect transistor (ISFET). For comparison, HfO2 sensing membranes were prepared by reactive radio frequency (r.f.) sputter and atomic layer deposition (ALD) to investigate the sensing performance. After rapid thermal annealing (RTA), 3.5-nm ALD-HfO2 layer has high sensitivity (59.6 mV/pH), low drift coefficient (1 mV/h) and small hysteresis (5mV), which could be a potential candidate for commercial products. In addition, CF4 plasma treatment can be processed to increase the sensitivity to sodium (Na^+) ions. To verify biosensor applications, NH3 plasma treatment was applied to ALD-HfO2 to replace traditional APTES treatment in urea sensor with acceptable performance.
延伸閱讀
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