- 期刊
單晶石墨烯成長模型與單相旋轉角之分析
Growth Model and Orientation Analysis of Single Crystal Graphene
摘要
本研究利用化學氣相沉積系統，在高溫下成長單晶粒石墨烯於催化銅金屬上；我們推導出碳原子沉積速率，為一元二次方程式的加速度成長；在參數為甲烷0.5sccm及氫氣30sccm以及高溫1050度下之成長之石墨烯，其片電阻與光學穿透率為310Ω/□與97.7%。除了推導出石墨烯之成長模型，我們在藍寶石基板上鍍製一層1μm厚的銅膜，並透過電化學電鍍增加其厚度至25μm，最後以機械力方式將銅箔從藍寶石基板上剝離下來，經過退火後可以在銅箔表面得到高指向性的單晶銅（111）；利用高指向性的單晶銅（111）成長石墨烯，並在傅氏轉換下，證明將石墨烯單晶成長在銅（111）時為單一方向，而成長在多晶銅表面時為多方向性。
並列摘要
In this study, graphene films have been synthesized on copper by using chemical vapor deposition (CVD). We derived a growth model of single crystal graphene is a quadratic equation. The sheet resistance of graphene was 310Ω/ and the optical transmittance was 97.7%. Not only derived the growth model of graphene crystals, but also proved the consistency orientation of graphene crystals grown on Cu(111) substrate by using Fourier Transformation method.
延伸閱讀
- 朱彥霖（2014）。單晶相石墨烯製備與特性分析〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0412201512015817
- 劉定宇、劉哲君、鄒惠名、王世軒（2017）。PEDOT：PSS-石墨烯高分子奈米複合透明導電模之製備與表面分析。化工，64(3)，63-74。https://doi.org/10.29803/CE.201706_64(3).0008
- Tsai, L. W. (2012). 以化學氣相沉積法成長單層石墨烯及其應用於可撓式透明場效電晶體之研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-2002201315281807
- Lu, C. C. (2013). 自我對準閘極軟性石墨烯電晶體以及雙層單晶石墨烯超晶格之研究 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2013.00056
- Chiu, Y. J. (2015). Optimization in Quality and Quantity of CVD Graphene Growth [master's thesis, National Chung Cheng University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0033-2110201614032953