掃描式電子顯微鏡中之背向電子繞射分析技術

Electron Backscatter Diffraction Technique in SEM

陳厚光(Hou-Guang Chen) ； 張立(Li Chang)

《科儀新知》 152期 (2006/06) Pp. 22-30

https://doi.org/10.29662/IT.200606.0003

摘要

本文簡單介紹利用SEM中的背向電子繞射技術(EBSD)進行材料晶體結構分析的原理、實驗過程以及應用。在文中敘述EBSD繞射圖案產生及繞射圖案自動辨識處理的原理。另外也說明實驗過程中實驗參數設定及儀器的校正對實驗結果的影響。由於EBSD結合了場發射掃描式電子顯微鏡，可以針對材料特定的微小區域進行晶體結構的分析以及晶向的鑑定，使得EBSD除了在金屬結構材料分析之外，也被應用在半導體及光電相關領域上。在最後列舉相關之多晶矽與Ni3Al的實例來說明EBSD在材料分析上的應用。

並列摘要

The article introduces the principle, experimental procedure and applications of electron backscatter diffraction (EBSD) technique for crystallographic analysis. The formation of EBSD pattern and automatic pattern identification with indexing is described. The effect of instrument parameters and calibration on the experimental results is also presented. Using a field emission SEM with EBSD, the crystallographic structure and orientation in a specific area on a sample can be easily characterized in sub-micrometer scale. In addition to application for metallographic analysis of structural metal materials, EBSD has also been used for analysis of microelectronic devices in semiconductor industry. Practical examples using EBSD for materials analysis are demonstrated for poly-Si and Ni3Al.