以石英奈米錐狀陣列作為具抗反射性質之次波長結構

Fabrication of Nanocone Subwavelength Antireflection Structures on Quartz Substrates

湯喻翔(Yu-Hsiang Tang) ； 黃茂榕(Mao-Jung Huang) ； 蘇健穎(Jien-Yin Su) ； 蕭銘華(Ming-Hua Shiao)

《科儀新知》 188期 (2012/06) Pp. 86-93

https://doi.org/10.29662/IT.201206.0009

摘要

本研究結合自組裝奈米球微影（self-assembled nanosphere lithography, SANL）及感應耦合電漿離子蝕刻（inductively coupled plasma reactive ion etching, ICP-RIE）兩項技術，製作出具規模排列之錐狀陣列結構，可應用於光學系統之抗反射層。我們發展一種簡單的製程，成功地在石英玻璃基板上製作出次波長結構，期望能達到寬頻抗反射的效果，以增加入射光對石英玻璃的穿透率。實驗結果證實利用薄光阻格狀結構搭配震盪塗佈法，可以在石英玻璃上製備一單層且整齊排列之聚苯乙烯奈米球，並以此為遮罩進行乾式蝕刻。在乾式蝕刻方面，我們利用C4F8/He電漿對石英玻璃進行蝕刻，以聚苯乙烯奈米球為遮罩所得到的結構為一圓柱狀，藉由調整蝕刻製程參數，則可得到尖錐狀結構。實驗結果顯示最佳的次波長抗反射結構為高度190 nm、直徑108 nm、深寬比可達1.81：1之錐狀陣列，並使得波長300－1000 nm的入射光之有效反射率下降到6.75%，達到寬頻抗反射的效果。

並列摘要

This study combined self-assembled nanosphere lithography (SANL) and inductively coupled plasma reactive ion etching (ICP-RIE) for fabricating orderly arranged nanocone arrays on a quartz substrate. We established a simple process for successfully fabricating subwavelength structure (SWS) on glass substrate, achieving broadband anti-reflection (AR) and increasing the transmittance of incident light across the quartz glass. This novel process arranged a monolayer of nanospheres onto 2 x 2 cm^2 test specimen. In addition, we evaluated various etching times of ICP-RIE for producing SWS surfaces, which resulted in various specific surface areas for the quartz surfaces. Smoothly tapered SWS surfaces with a width of 108 nm and a height of 190 nm could be produced on quartz wafer. This fabricated SWS decreased the surface reflectance less than 6.75% in the visible light spectrum.