具有多重負微分電阻之磷化銦／砷化銦鎵分裂迷你帶結構共振穿透二極體

Multiple Negative Differential Resistances of InP/InGaAs Resonant Tunneling Diode with Split Miniband Structures

蔡榮輝(Jung-Hui Tsai)

《高雄師大學報：自然科學與科技類》 21期 (2006/12) Pp. 55-66

https://doi.org/10.7060/KNUJST.200612.0055

摘要

本論文主要論述一種具有四週期超晶格結構之磷化銦/砷化銦鎵p-n接面共振穿透二極體的連續穿透特性。為獲得更多軌跡的負微分電阻，本研究元件使用了相當薄之砷化銦鎵量子井，可使四週期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分裂的量子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成了高場區域。實驗的結果顯示，由於此分裂迷你帶結構及超晶格結構中高場區域的擴展，於常溫下可觀察出六道軌跡之多重負微分電阻特性。因此，本研究元件極適合於多值邏輯電路應用。

關鍵字

磷化銦／砷化銦鎵 ； 共振穿透二極體 ； 超晶格 ； 負微分電阻 ； 分裂迷你帶

並列摘要

Sequential tunneling behavior in an InP/InGaAs p-n resonant tunneling diode with four-period superlattice is demonstrated. For the requirement of more negative differential resistance (NDR) routes, three split quantized energies are formed in the four-period InP/InGaAs superlattice structure with relatively thin InGaAs quantum wells under ideal flat-band condition, and high-field domain in the superlattice is formed under sufficiently large operation bias. Experimentally, an interesting six-route NDR characteristic, resulting from the form of split miniband structures and the extension of high-field domain in the superlattice, is observed at room temperature. Consequently, the studied device shows a good potential for multiple-valued logic circuit applications.

並列關鍵字

InP/InGaAs ； resonant tunneling diode ； superlattice ； negative differential resistance ； split miniband

參考文獻

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