一種精準的MOSFET臨限電壓量測方法

A Novel Method for Determining the Threshold Voltage of MOSFET Devices

康定國(Ting-Kuo Kang) ； 陳勝利(Shen-Li Chen) ； 李世鴻(S. Lee) ； 朱聖緣(S. Y. Chu)

《大葉學報》 5卷1期 (1996/12) Pp. 171-177

https://doi.org/10.7119/JDYU.199612.0171

摘要

在預測元件特性行為時，精確的元件模型取決於模型中正確的物理參數。在本論文中，我們完整地探討如何去決定金氧半場效電晶體的臨限電壓值，並且提出一個深具物理意義的新力法。此新方法稱為基底電荷孌動方法（BCV Method），它是基於汲極電流包含從源極到汲極端的基底電荷，比基底電荷變動方法，在萃取臨限電壓是一個新奇而且正確的新技術。在論文中找們對DDD和LDD兩種汲極結構金氧半場效電晶體，實驗性地萃取出真正的臨限電壓值。

關鍵字

金氧半場效電晶體 ； 臨限電壓

並列摘要

We clearly know that the accuracy of a device model in predicting device characteristics is dependent on the correct parameters of the model. In this paper, we completely investigate how to determine the threshold voltage of MOSFET devices. In order to succeed in getting threshold voltage, we present a new physically based method for measuring the threshold voltage of MOSFET devices. This novel method, called the bulk charge varying (BCV) method, is based on the drain current to include the bulk charge variation from the source end to the drain end. The BCV method will be a new accurately technique for experimentally extracting the threshold voltage of MOSFET devices.

並列關鍵字

MOSFET ； threshold voltage