化學水浴法製備太陽能電池緩衝層ZnS薄膜與性質研究

Characterizations of Zinc Sulfide Buffer Layer for Thin Film Solar Cells Prepared by Chemical Bath Deposition

傅彥培(Yen-Pei Fu) ； 陳建智(Jian-Jhih Chen)

《臺灣鑛業》 63卷2期 (2011/06) Pp. 37-45

https://doi.org/10.30014/TMI.201106.0006

摘要

本研究以化學水浴沉積法製備硫化鋅薄膜，找出適合CuIn(下標 1-x)Ga(下標 x)Se(下標 2)薄膜太陽能電池應用的緩衝層。利用硫酸鋅與硫脲分別提供鋅與硫之來源，以氨水控制反應溶液pH值為10，再加入聯胺作為錯合劑，均勻混合後，於持溫80℃中進行水浴沉積硫化鋅薄膜。本研究根據沉積時間及聯胺濃度的不同作為變更參數。結構特性分析以X光繞射光譜儀分析得知其薄膜結構為閃鋅礦，利用能量分散光譜儀掃描試片表層得到Zn:S組成比例接近1:1之理想化學劑量比。掃描式電子顯微鏡觀測表面形貌，隨著沉積時間增加，薄膜表層之均質成核與異質成核兩者會同時生成；再利用表面輪廓儀測量薄膜表面形態與厚度，結果顯示隨著沉積時間的增加，薄膜厚度會由初期的線性成長逐漸達到飽和成長。同時根據薄膜厚度與穿透率的關係式，計算得到其能隙約為3.03~3.59 eV；根據其分析結果，發現當聯胺與氨水比例（H/A）為0.18時其最佳沉積時間約為60分鐘及H/A=0.54時最佳沉積時間約為90分鐘，沉積得到的硫化鋅薄膜較適合應用於CuIn(下標 1-x)Ga(下標 x)Se(下標 2)薄膜太陽能電池之緩衝層材料。

關鍵字

化學水浴法 ； 硫化鋅薄膜 ； 太陽能電池

並列摘要

In the study, zinc sulfide thin films are prepared by chemical bath deposition that we can find out the useful parameters applying to CuIn(subscript 1-x)Ga(subscript x)Se(subscript 2) thin film solar cell. Use the zinc sulfate and thiourea to be the sources of zinc ions and sulfur ions, respectively. Control the pH value to be about 10 in the reactive solution by adding ammonia, and the complex agent of Hydrazine solution are added and well mixed. The growth of zinc sulfide films in reaction solutions is taken place at 80℃. In this study, the deposition times and different Hydrazine concentrations are controlled. The thin film structure is sphalerite structure, which is determined by X-ray diffraction spectrometer (XRD), and the energy dispersive spectrometer (EDS) is used and measured that indicating the surface have an ideal stoichiometric ratio 1:1. Scanning electron microscopy (SEM) is used as the observation of surface morphology. With the increase of deposition time, the surface of the film is observed that the heterogeneous nucleation and homogenous nucleation happen in the same time. Then measurement of the morphology and thickness by using the alpha-step spectrometer gain results of the films, which has shown that the linear growth in the beginning alters to the saturated growth gradually with the increasing deposition time. According to UV/visible spectrometer transmittance measurements and the relationship between the incident wavelengths, it can be converted to the energy gaps (Eg), which are about 3.03 to 3.59eV. Based on the all analytic results, when the Hydrazine/Ammonia ratio(H/A) equals 0.18, the best deposition time is 60 minutes and H/A equals 0.54 is 90 minutes. In this condition the ZnS films which is more suitable for the applications of buffer layer material for the CIGS thin film solar cell.

並列關鍵字

Chemical bath deposition ； Zinc sulfide thin film ； Solar cell