技術的創新與其專利的侵權迴避,是當今高科技產業競爭優勢的重要成功關鍵因素之一。本文用專利地圖與其家族之分析工具、解決創造性問題理論(TRIZ)之創新工具以及專利侵權之判準原則,去探討以高介電常數(Hi-K)物質的美國專利(公告號為US7, 005, 674),作為有機薄膜電晶體(Organic Thin Film Transistor, OTFT)電子遷移率(mobility)改善和發展技術創新與其專利侵權迴避的參考。本研究顯示在OTFT中之電子遷移率技術創新與專利侵權迴避中,得到載子移動率的必要元件與其連接關係、藉由TRIZ技術矛盾理論發展出系統化流程,以產生載子移動率之技術創新概念和利用專利侵權判準原則之迴避設計、選用適合的載子移動率取得最終迴避設計之解決方案的研究成果,以期作為顯示器的顯示品質改善和取代a-Si TFT關鍵技術門檻的關鍵因素參考。
An innovative technological designing and the avoidance of patent infringement have become an inevitable key to survive the increasingly sharp competition available in hi-tech industry and business. By making use of the patent maps-and some other analytical tools in the field, together with tools of TRIZ (theory of inventive problem solving), and the critical principles commonly used in patent infringement, we try to explore the U.S. Hi-K patent (#US7, 005, 674), in order to have an access to some new ways for an innovative designing and the avoidance of patent infringement as well on the mobility of OTFT. It is evidently concluded in the paper that the components to electron mobility and the joining relationships in between can be obtained and a systematic flow chart can thus be created by way of the fuzzy theories applicable in TRIZ technology. Our goal is to design an innovative approach to the mobility and at the same time to avoid the patent infringement-leading to the best selection of the mobility on OTFT. We also discuss some critical factors to better quality of monitor display and a replacement of a-Si TFT.
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