共蒸鍍製程技術發展銅銦鎵硒(CIGS)太陽能電池

Development of Copper Indium Gallium Diselenide (CIGS) Solar Cell by Co-Evaporation Technique

蕭育仁 ； 謝嘉民 ； 薛丁仁 ； 沈昌宏 ； 葉祐名

《國家奈米元件實驗室奈米通訊》 17卷4期 (2010/12) Pp. 21-24

https://doi.org/10.29913/NDLC.201012.0004

摘要

CIGS薄膜太陽能電池具有低成本、重量輕、可撓曲、壽命長等特色與優點，故受到相當多的注目。國家奈米實驗室擁有多腔體濺鍍研發系統及高精準度蒸鍍系統，可以涵蓋大部分的CIGS太陽能電池製程，包括CIGS組成計量控制、沉積金屬鉬及鋁、透明導電層、與硒化處理之研製，整合後可調整CIGS電池緩衝層能隙，以達高效率薄膜太陽能目標。NDL已規劃無Cd汙染之緩衝層製作，以化學浸泡或濺鍍的方式製作ZnS來取代CdS。目前本實驗室緩衝層硫化鋅(ZnS)所得到的光電轉換達12.1%，異質結構CIGS薄膜太陽能電池至今已成功的實現太陽能電池轉換效率，其兼具成本及轉換效率的特性受到產業界量產的注目。NDL未來亦將建立太陽能電池的製造平台，可降低學術界及產業界的研究資源。

關鍵字

共蒸鍍技術 ； CIGS太陽能 ； 無鎘緩衝層

並列摘要

The CIGS thin film solar cell has the low cost, the weight light, to be flexible, the long-life and so on characteristics and the merit, therefore becomes very important. NDL has of the multi-chamber sputter and co-evaporation system, may cover the majority of CIGS solar cell manufacture flow, including the elements of CIGS composition, deposition of metal molybdenum and the aluminum, the transparent conducting layer, and selenization, after the conformity, may adjust the CIGS buffer layer, reaches the high efficiency thin film solar energy goal. NDL has planned the manufacture of Cd-free buffer layer, or uses the way which by chemical bath deposition to manufacture ZnS to substitute for CdS. At present, our laboratory makes the buffer layer zinc sulfide (ZnS) and obtains the efficiency of 12.1%, the heterojunction structure CIGS thin film solar cell has succeeded until now realizes the solar cell transfer efficiency, it has both the cost and the efficiency characteristic for industry manufacture. NDL will build in the future about solar cell's manufacture platform, may reduce the academic and the industrial field research resources.

並列關鍵字

Co-Evaporation Technique ； CIGS Solar Cell ； Cd-Free Buffer Layer