高速低電壓應用之40奈米砷化銦通道量子井場效電晶體

40 nm InAs-Channel Quantum Well Field Effect Transistors for High-speed and Low-voltage

郭建億 ； 張翼

《國家奈米元件實驗室奈米通訊》 18卷1期 (2011/03) Pp. 18-23

https://doi.org/10.29913/NDLC.201103.0003

摘要

本研究中，我們成功的開發出40奈米砷化銦通道的量子井場效電晶體，為了降低短通道效應，元件更結合了先進製程兩階段閘極蝕刻與白金掘入等方式來縮短閘極至通道的距離做垂直微縮，進而維持一定比例的通道寬度比。整體上砷化銦元件在直流電性、截止電壓與微波特性都改善許多相較於未做垂直微縮的元件，在低汲極操作偏壓下(V下標 DS)=0.5 V)，其轉導值與電流截止頻率分別為1950 mS/mm與423 GHz，這些結果皆因砷化銦具有高速電子遷移率所致。
邏輯特性方面，砷化銦電晶體展現極優異的特性包括DIBL=60 mV/V, SS=88 mV/dec，此外元件的閘極延遲時間為0.62 psec，顯現三五族電晶體適合於後矽奈米世代n型通道高速邏輯元件的使用。

關鍵字

砷化銦 ； 量子井場效電晶體 ； 高速低電壓應用

並列摘要

40-nm InAs channel Quantum Well FETs were fabricated successfully. The device features a two-step recess process plus Pt-buried gate to thin down the In(subscript x)Al(subscript 1-x)As barrier layer (vertical scaling) in order to reduce the short channel effect. The DC, threshold voltage and RF performances were improved for the device with vertical scaling. The fabricated device with Lg=40 nm exhibits V(subscript T=-0.2 V, g(subscript m=1950 mS/mm, f(subscript T=423 GHz at a low drain bias of V(subscript DS)=0.5 V. These excellent results are attributed to the superior electron mobility of InAs channel. For the logic characteristics, the InAs device demonstrates the DIBL=60 mV/V, SS=88 mV/dec and low gate delay time of 0.62 psec, showing great potential for high-speed and low-power digital applications in post Si generation.

並列關鍵字

InAs ； Quantum Well Field Effect Transistors ； High-speed Lowpower Applications