高介電常數材料金氧半元件之發展

High Permittivity Gate Dielectric Materials for CMOS Technology

蔡孟辰 ； 陳敏璋

《國家奈米元件實驗室奈米通訊》 22卷1期 (2015/03) Pp. 13-19

摘要

近年來有關高介電常數閘極介電材料的研究與發展越來越受到重視，有很多新穎的高介電材料被提出。本文簡單地從物理和化學角度出發，整理高介電材料的發展方向，包含高介電材料本身的特性與組成、介面層的性質與控制、以及如何選擇高介電材料。此外，本文並整理與分析高介電材料所面臨的問題。

關鍵字

高介電常數材料 ； 介面層

並列摘要

In recent years, researches on high-K gate dielectrics attract more and more attention. A variety of new high-K materials have been proposed. From the physical and chemical points of view, this article reviews the development of high-K gate dielectrics, including the essential characteristics and compositions of high-K materials, as well as the interfacial engineering. The problems associated with the high-K gate dielectrics are also discussed in this article.l

並列關鍵字

High-K materials ； Interface