脈衝雷射鍍膜技術在二維材料之應用

The Growth of Two Dimensional Materials by Pused Laser Deposition

何焱騰 ； 馬俊皓 ； 張翼

《國家奈米元件實驗室奈米通訊》 22卷1期 (2015/03) Pp. 20-27

摘要

最近過渡金屬硫屬化合物（Transition Metal Dichalcogenides, TMDs）受到密切關注，主要是此類材料會自然形成層狀結構而無額外懸鍵（Dangling Bond），提供了優異之量子侷限特性。其中二硫化鉬（MoS_2）材料曾以剝離法展示了優異之電晶體特性，因此引發許多相關由下而上之成長技術開發，以滿足未來應用需求。而化學氣相沉積法（Chemical Vapor Deposition, CVD）是目前普遍應用於二維層狀材料之成長技術，然而它在控制膜層數與增加覆蓋性方面仍有瓶頸。本文首先提出過去常應用於氧化物磊晶之脈衝雷射鍍膜（Pulsed Laser Deposition, PLD）方式，藉此來開發MoS_2磊晶成長技術。所成長之MoS_2其拉曼分析結果，展示了PLD技術在成長超薄材料的可行性。RHEED及TEM分析結果，說明了PLD在MoS_2磊晶有進行二維成長之優勢，同時亦驗證了MoS2與c-sapphire之磊晶關係為：(0006) sapphire // (0002) MoS_2 and[2110] sapphire // [0110] MoS_2。以上初步成果顯示，PLD在超薄二維材料成長方面，深具發展潛力。

關鍵字

過渡金屬硫屬化合物 ； 二維材料 ； 二硫化鉬 ； 脈衝雷射鍍膜

並列摘要

Recently, transition metal dichalcogenides (TMDs) have received intense interest mainly due to their automatically formation of layered structure without dangling bond providing excellent quantum confinement. Among TMDs, MoS_2 top gate field effect transistor (FET) has been demonstrated its extraordinary characteristics from exfoliation. Therefore, numerous bottom up growth method have been inspired and developed to meet the requirement for application. The chemical vapor deposition (CVD) is one of the important method to realize two dimensional (2D) layered MoS_2. However, the number of monolayer and the coverage degree of MoS_2 grown by CVD are still a challenge. In this article, the pulsed laser deposition method used to grow oxide epitaxy is primarily proposed to develop the epitaxy of MoS_2. The Raman analysis of MoS_2 with various pulse number in PLD demonstrate the excellent controllability, suggesting the feasibility for thin layered material growth. The results of Re - ection high energy electron di - raction (RHEED) and transmission electron microscopy (TEM) analysis revealing the superiority of 2D layered growth of PLD for MoS_2. Also the epitaxial relationship of MoS_2 on c-sapphire are: (0006) sapphire // (0002) MoS_2 and [2110] sapphire // [0110] MoS_2. The primarily results demonstrate the promising of PLD for the growth of thin layered materials.

並列關鍵字

TMDs ； 2D materials ； MoS_2 ； PLD