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極紫外光微影光罩檢測技術

Extreme Ultraviolet Lithography Mask Inspection Technologies

摘要


此篇文章對於極紫外光(EUV)微影技術所須之具多層反射膜結構之光罩,其製造過程中需要之檢測技術之發展現況做一簡介,並提出一些展望。EUV光罩之製程設計可採用許多和傳統光學光罩製程類似的步驟與設備,本文先由此出發做一簡介與比較,並指出幾個檢測EUV光罩特別之處。之後針對EUV光罩基底片(Mask Blank)製備過程之檢測技術做較深入之探討,並提出未來技術之發展方向。

並列摘要


This article introduces the current developments and prospects of inspection technologies which are necessary for the fabrication of EUV mask with a reflective multilayer structure. It can utilize many similar procedures and instruments used in the traditional optical mask process into the design and manufacture of EUV mask one. In this article, it begins with a brief introduction and comparison, and also points out several particular aspects of EUV mask inspection. After that, it makes a further investigation about the inspection technologies throughout the fabrication of EUV mask blank. Finally, it indicates the direction of future development.

參考文獻


Moore, G. E.(1995).Lithography and the Future of Moore's Law.SPIE.2437,2-17.
International Technology Roadmap for Semiconductors 2.0, http://www.itrs2.net
謝政憲,邱燦賓,徐仲偉(2008).雙重曝影製作技術與極紫外光(EUV).電子月刊.14(3),122-140.
李彥旻,陳偉豪,李佳翰(2008).極紫外光微影光罩技術之探討.電子月刊.
van de Kerkhof, Mark(2017).Enabling sub-10nm node lithography: presenting the NXE: 3400B EUV scanner with improved overlay, imaging, and throughput.Proc. SPIE Int. Soc. Opt. Eng..

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