高深寬比玻璃通孔金屬化與填孔電鍍技術

Metallization and Filling Technologies for High Aspect Ratio Through Glass Via

張佑祥 ； 梁烝輔 ； 王偉彥 ； 陳玠錡 ； 黃萌祺

《機械工業雜誌》 Issue 451 (2020/10) Pp. 25-35

Abstracts

近年來，三維電子封裝與異質整合技術已經被廣泛的討論與發展。高深寬比玻璃通孔（TGV）的基板是作為中介層的選項之一。因為玻璃基板具有以下優點：低介電係數、超高電阻率、高尺寸安定性、與銅的熱膨脹差異小以及良好的機械性質。然而，透過全濕式製程來完成玻璃金屬化與無缺陷高深寬比TGV填孔技術是難以實現的。本研究，利用簡單的全濕式製程技術，開發出玻璃金屬化技術和無缺陷高深寬比TGV填孔技術。此外，此TGV填孔技術是在直流電（DC）的模式下，通過使用單一添加劑電鍍配方系統在電鍍液完全靜止（無流場）的狀態下完成的全新填孔電鍍製程。

Keywords

玻璃通孔 ； 三維封裝 ； 填孔電鍍 ； 異質整合

Parallel abstracts

3D electronics packaging and heterogeneous integration technologies have been widely discussed and developed in recent years. High aspect ratio (HAR) through glass via (TGV) substrate is one option as an interposer substrate. Glass substrate provides several advantages, such as low dielectric constant, ultra-high resistivity, high dimensional stability, low coefficient of thermal expansion (CTE) mismatch with copper (Cu) material, and good mechanical properties. However, the Cu metallization for HAR TGV with defect-free filling is challenged by using a simple all-solution process. In this study, we demonstrated a defect-free Cu filling for HAR TGVs by an all-solution process. Furthermore, this TGV is filled by novel DC plating in presence of a single additive formula under a stagnant condition without forced convection.

Parallel keywords

Through Glass Via (TGV) ； 3D packaging ； Through via filling ； Heterogeneous Integration

References

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