氧化鋁磁性穿隧接面中可電控之非揮發性電阻及磁阻轉換之研究

我們研究了在不同的氧化程度下，氧化鋁磁性穿隧接面的自旋傳輸性質與遲滯曲線特性，結果顯示的雙極電阻變換以及在高電阻態與低電阻態間可以以電場控制之穿隧電阻效應，使一個樣品可在四個電阻態間切換。電流-電壓曲線及電導-溫度曲線的擬合結果顯示，在氧化鋁壁壘層中的電導率除了穿隧效應外，還有很大一部分來自非彈性躍遷的貢獻。我們的實驗結果顯示同時使用電訊號及磁訊號以控制氧化鋁磁性穿隧結面的電阻態式可能的，並且有機會應用於多位元的記憶裝置發展

關鍵字

自旋閥；氧化鋁；磁阻；電阻式記憶體效應；多功能記憶體

並列摘要

We report Spin-dependent transport properties and I-V hysteresis characteristics in AlOx magnetic tunnel junctions prepared with different oxidation condition. The bipolar resistive switching and electrically programmable tunneling magnetoresistance measured at high resistance state and low resistance state demonstrate four resistant states in a single device. The fitting analysis of I-V and R-T curves proves that higher-order inelastic hopping, in addition to the tunneling conductivity, within the AlOx barrier contributes significantly to the conductivity of the sample. Our study reveals the possibility of controlling multiple resistance states in an AlOx magnetic tunnel junction using both magnetic field and electric stimuli, which could provide potential application for the multibit memory.

並列關鍵字

Spin valve ； AlOx ； Magnetoresistance ； Resistance switching ； Multifunctional memory device

參考文獻

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國際替代計量

氧化鋁磁性穿隧接面中可電控之非揮發性電阻及磁阻轉換之研究

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